Specific Process Knowledge/Thin film deposition/Temescal/Acceptance Test: Difference between revisions

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+<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
 ==Temescal acceptance test ==
 [[File:w26 with resist02.jpg|400px|right|thumb|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]]
-In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films.
+In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager.
-The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness.
+The uniformity of the ion beam etch was measured by ellipsometry in 5 points on Si wafers with SiO<sub>2</sub> coating of a known thickness.
-For metal films, the thickness and for Ti/Ni the sheet resistance uniformity were measured.
+For metal films the thickness was measured with a stylus profiler and for Ti/Ni the sheet resistance uniformity was measured by Capres A/S (now part of KLA).
 Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.
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 The thickness uniformity was not tested for the 8" sample holder nor for the tilted sample holder.
-We cannot guarantee that the batch-to-batch thickness reproducibility will always be below 3 % as there may be more drift over longer times. We check the thickness of a Ti/Au deposition every month and ensure that it is within 10 % of the expected value and so far, within in the first half year of using the instrument, the variation has been much less than 10 %.
+We cannot guarantee that the batch-to-batch thickness reproducibility will always be below 3 % as there may be more drift over longer times. We check the thickness of a Ti/Au deposition every month and ensure that it is within 10 % of the expected value and in most cases the variation has been much less than 10 %. You can see the deviation over time in the QC data which is found in LabManager under Documents or ask staff for the detailed data.
 == Sheet resistance uniformity ==
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 == Ion source ==
-We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub>. The etch rate is strongest in the center, about 15-20% higher than at the edges of a 6" wafer.
+We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub> at the acceptance test in 2028. The etch rate was strongest in the center, about 15-20% higher than at the edges of a 6" wafer.
-The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between the two identical batches.
+The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches.
 == Vacuum performance ==
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 As expected, the side wall deposition was thicker for 53 &deg; tilt than for 17 &deg; tilt.
-[[File:tilt27_sample1-_01.jpg|400px|thumb|left|17 &deg; tilt: Side wall deposition of Ti/Au on Si and nLOF resist.]]
+[[File:tilt27_sample1-_01.jpg|400px|thumb|left|17 &deg; tilt: Side wall deposition of Ti/Au on Si and 1 µm tall nLOF resist.]]
-[[File:tilt53_sample2_01.jpg|400px|thumb|right|53 &deg; tilt: Side wall deposition of Ti/Au on Si and nLOF resist.]]
+[[File:tilt53_sample2_01.jpg|400px|thumb|right|53 &deg; tilt: Side wall deposition of Ti/Au on Si and 1 µm tall nLOF resist.]]