Specific Process Knowledge/Thin film deposition/Deposition of Tin: Difference between revisions

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== Tin deposition ==
== Tin deposition ==


Tin can be deposited by e-beam evaporation. It was evaporated in the Alcatel e-beam evaporator, which is being decommissioned, but has not yet been evaporated in the Physimeca or the Temescal, which we have now (August 2018)
Tin can be deposited by e-beam evaporation. It was evaporated in the Alcatel e-beam evaporator, which is decommissioned, but has not yet been evaporated in the Temescal e-beam evaporator which we have now (June 2023). Please contact the Thin Film group if you would like to deposit tin.


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! Comment
! Comment
| Tin has not yet been deposited in the Temescal to date (August 2018).
| Tin has not yet been deposited in the Temescal to date (May 2022).
Please contact the Thin Film group if you would like us to develop the process.
Please contact the Thin Film group if you would like us to develop the process.
|}
|}


'''*''' ''For thicknesses above 600 nm permission is required.''
'''*''' ''For thicknesses above 600 nm permission is required.''

Latest revision as of 12:14, 13 June 2023

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Unless otherwise stated, this page is written by DTU Nanolab internal

Tin deposition

Tin can be deposited by e-beam evaporation. It was evaporated in the Alcatel e-beam evaporator, which is decommissioned, but has not yet been evaporated in the Temescal e-beam evaporator which we have now (June 2023). Please contact the Thin Film group if you would like to deposit tin.

E-beam evaporation (Temescal)
General description E-beam deposition of Sn

(line-of-sight deposition)

Pre-clean Ar ion clean
Layer thickness 10Å to 1µm*
Deposition rate 1Å/s to 10Å/s
Pre-clean Ar ion bombardment
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • small pieces
Allowed materials
Comment Tin has not yet been deposited in the Temescal to date (May 2022).

Please contact the Thin Film group if you would like us to develop the process.

* For thicknesses above 600 nm permission is required.

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