Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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* [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]] | * [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]] | ||
* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]] | |||
==Comparison of deposition equipment for silver== | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| E-beam deposition of Ag | | E-beam deposition of Ag (line-of-sight, very good thickness uniformity) | ||
| Thermal deposition of Ag | | Thermal deposition of Ag (line-of-sight) | ||
| Thermal deposition of Ag | | Thermal deposition of Ag (line-of-sight, good thickness uniformity) | ||
| Sputter deposition of Ag (some step coverage, should have good uniformity) | |||
| Sputter deposition of Ag | | Sputter deposition of Ag (some step coverage) | ||
| Sputter deposition of Ag | | Sputter deposition of Ag including pulsed DC and HiPIMS | ||
| | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
| Ar ion beam | | Ar ion etch (only in E-beam evaporator Temescal) | ||
| none | |||
| none | | none | ||
| none | | none | ||
| RF Ar clean | | RF Ar clean | ||
| RF Ar clean | | RF Ar clean | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
Line 59: | Line 59: | ||
|10Å to 0.5µm ** | |10Å to 0.5µm ** | ||
|10Å to 0.5µm **(0.5µm not on all wafers) | |10Å to 0.5µm **(0.5µm not on all wafers) | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
|10Å to about | |10Å to about 2000Å | ||
|10Å to | |10Å to ? | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
Line 69: | Line 68: | ||
|1 to 10Å/s | |1 to 10Å/s | ||
|5Å/s | |5Å/s | ||
|1 to 10Å/s | |1 to 10Å/s | ||
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | |Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | ||
|Dependent on process parameters. | |Dependent on process parameters. | ||
| | |Dependent on process parameters. | ||
|- | |- | ||
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*smaller pieces | *smaller pieces | ||
| | | | ||
*Up to | *Up to 1x8" wafer or 1x6" wafer | ||
*Up to 3x4" wafers | |||
*smaller pieces | *smaller pieces | ||
| | | | ||
Line 89: | Line 88: | ||
*6x4" wafers or | *6x4" wafers or | ||
*24x2" wafers | *24x2" wafers | ||
| | | | ||
*6x6" wafers or | *6x6" wafers or | ||
Line 103: | Line 97: | ||
*1x4" wafers or | *1x4" wafers or | ||
*smaller pieces | *smaller pieces | ||
| | | | ||
* | *up to 10x6" wafers or | ||
* | *up to 10x4" wafers or | ||
*many smaller pieces | |||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
!Allowed materials | !Allowed materials | ||
| | | | ||
* | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
| | | | ||
* | *Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | ||
| | | | ||
* | *Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | ||
| | | | ||
* | *Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | ||
| | | | ||
* | *Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | ||
| | | | ||
* | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
|-style="background:whitesmoke; color:black" | |-style="background:whitesmoke; color:black" | ||
! Comment | ! Comment | ||
| Pumpdown approx 20 min | | Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. | ||
| Pumpdown approx | | Pumpdown approx 15 min. | ||
| Only very thin layers. Pumpdown approx 1 | | Only very thin layers. Pumpdown approx 1.5 hours. | ||
| | | Pumpdown approx. 1.5 hours | ||
| | |Load and transfer < 10 minutes | ||
| | |Load and transfer approx. 12 minutes | ||
|- | |- | ||
|} | |} | ||
'''*''' ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@ | '''*''' ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk'' | ||
'''**''' ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@ | '''**''' ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk'' | ||
'''**''' ''Please ask responsible staff for 8" wafer holder'' | '''***''' ''Please ask responsible staff for 8" wafer holder'' |
Latest revision as of 14:58, 22 January 2024
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Unless otherwise stated, this page is written by DTU Nanolab internal
Deposition of Silver
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Sputter deposition of Silver
Thermal deposition of Silver
Comparison of deposition equipment for silver
E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | Thermal evaporation (Thermal Evaporator) | Thermal evaporation (Wordentec) | Sputter deposition (Wordentec) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
---|---|---|---|---|---|---|
General description | E-beam deposition of Ag (line-of-sight, very good thickness uniformity) | Thermal deposition of Ag (line-of-sight) | Thermal deposition of Ag (line-of-sight, good thickness uniformity) | Sputter deposition of Ag (some step coverage, should have good uniformity) | Sputter deposition of Ag (some step coverage) | Sputter deposition of Ag including pulsed DC and HiPIMS |
Pre-clean | Ar ion etch (only in E-beam evaporator Temescal) | none | none | none | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to 1µm* | 10Å to 0.5µm ** | 10Å to 0.5µm **(0.5µm not on all wafers) | 10Å to about 3000Å | 10Å to about 2000Å | 10Å to ? |
Deposition rate | 1 to 10Å/s | 5Å/s | 1 to 10Å/s | Depending on process parameters (also written in the logbook). | Dependent on process parameters. | Dependent on process parameters. |
Batch size |
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Allowed materials |
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Comment | Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. | Pumpdown approx 15 min. | Only very thin layers. Pumpdown approx 1.5 hours. | Pumpdown approx. 1.5 hours | Load and transfer < 10 minutes | Load and transfer approx. 12 minutes |
* For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk
** For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk
*** Please ask responsible staff for 8" wafer holder