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Specific Process Knowledge/Wafer cleaning/7-up & Piranha: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/7-up click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/7-up click here]'''
 
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'''All measurements on this page has been made by Nanolab staff.'''
 


==Cleaning of wafers or masks==
==Cleaning of wafers or masks==
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Samples not allowed or not compatible with these baths can be cleaned manually in a beaker filled with the so called "Piranha" mixture using one of the acids/bases fume hoods. This mixture consists of concentrated sulfuric acid and hydrogen peroxide forming very aggressive and reactive peroxide species (as in 7-Up) which is very effective at removing organic contaminants and to a certain extent some metal ions.  
Samples not allowed or not compatible with these baths can be cleaned manually in a beaker filled with the so called "Piranha" mixture using one of the acids/bases fume hoods. This mixture consists of concentrated sulfuric acid and hydrogen peroxide forming very aggressive and reactive peroxide species (as in 7-Up) which is very effective at removing organic contaminants and to a certain extent some metal ions.  


Always use one of these cleaning procedures after KOH etch or hot phosphoric acid etch (Nitride etch) to remove alkali ions before further processing. 7-up and Piranha should only be used '''AFTER''' stripping resist by other means (see [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip Resist strip] page). Cleaning samples with resist coatings or significant amounts of other organic substances can be very dangerous, because 7-Up and Piranha are so aggressive. '''These solutions are intended for removing TRACES of organic matter. Adding large amounts of organics can lead to explosive reactions!'''
Always use one of these cleaning procedures after KOH etch or hot phosphoric acid etch (Nitride etch) to remove alkali ions before further processing . 7-up and Piranha should only be used '''AFTER''' stripping resist by other means (see [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip Resist strip] page). Cleaning samples with resist coatings or significant amounts of other organic substances can be very dangerous, because 7-Up and Piranha are so aggressive. '''These solutions are intended for removing TRACES of organic matter. Adding large amounts of organics can lead to explosive reactions!'''


[[Image:WaferClean.jpg|300x300px|right|thumb|'Wafer clean' bath in cleanroom D3]]
[[Image:MaskClean.jpg|300x300px|right|thumb|'Mask clean' bath in cleanroom D3]]
[[Image:FH01-02.jpg|300x300px|right|thumb|Fume hood 01 and 02 in cleanroom D3]]
[[Image:Stinkskab_RR2.jpg|300x300px|right|thumb|Fume hood(RCA) in cleanroom B1]]
<br>
User manuals, risk assessments and contact information can be found on the equipment Info-pages in LabManager:<br>
User manuals, risk assessments and contact information can be found on the equipment Info-pages in LabManager:<br>
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=383 Wafer Cleaning Info page in LabManager]<br>[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=382 Mask Cleaning Info page in LabManager]
*[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=383 Wafer Cleaning Info page in LabManager]
<br>[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=368 Fume hood 01 Info page in LabManager]
*[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=382 Mask Cleaning Info page in LabManager]
<br>[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=369 Fume hood 02 Info page in LabManager]
*[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=368 Fume hood 01 Info page in LabManager]
<br>[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=146 Fume hood(RCA) Info page in LabManager]
*[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=369 Fume hood 02 Info page in LabManager]
*[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=508 Fume Hood 12 (Standard clean) Info page in LabManager]
 


<gallery widths=200px heights=200px>
WaferClean.jpg|Wafer clean' bath in cleanroom D3
MaskClean.jpg|Mask clean' bath in cleanroom D3
FH01-02.jpg|Fume hood 01 and 02 in cleanroom D3
FH12.JPG|Fume Hood 12 (Standard clean) in cleanroom B1
</gallery>


===Comparing Wafer/Mask Cleaning baths and Piranha clean===
===Comparing Wafer/Mask Cleaning baths and Piranha clean===
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Cleaning of masks using the dedicated bath in Wet bench 03.
Cleaning of masks using the dedicated bath in Wet bench 03.
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Cleaning of wafers using a beaker in a fumehood in cleanroom B1 or D3. Used for glass wafers or wafers with metal or other materials that you are not allowed to put in the Wafer or Mask Cleaning bath.
Cleaning of wafers using a beaker in a fumehood in cleanroom D3. Used for glass wafers or wafers with metal or other materials that you are not allowed to put in the Wafer or Mask Cleaning bath.
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{{fnb|1}} In preparing a solution involving an acid, always add the acid last. The exception to this rule is Piranha, in which case you add H<sub>2</sub>O<sub>2</sub>, which is a very strong oxidant, to H<sub>2</sub>SO<sub>4</sub>, which is a very strong acid. This is done because it is potentially explosive and at the very least will cause the solution to become very warm.
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{{fnb|1}} '''In preparing a solution involving an acid, always add the acid last. The exception to this rule is Piranha, in which case you add H<sub>2</sub>O<sub>2</sub>, which is a very strong oxidant, to H<sub>2</sub>SO<sub>4</sub>, which is a very strong acid. This is done because it is potentially explosive and at the very least will cause the solution to become very warm.'''