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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Temescal click here]'''
<code><nowiki>=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=</nowiki></code>


<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


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==E-Beam Evaporator (Temescal)==
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[[File:Temescal.JPG|400px|right|thumb|The Temescal E-beam evaporator in cleanroom A-5]]


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/... click here]'''
This system allows electron-beam evaporation of thin films (<1 μm) of metals and one semiconductor, Ge. In e-beam evaporation, the deposition is line-of-sight from the source, which means it will coat only the surface of the sample facing the source directly. This makes it useful for example for [[Specific Process Knowledge/Lithography/LiftOff|lift-off]]. Nanolab's current e-beam evaporators were made by Temescal, a division of FerroTec, and this particular machine was purchased by Nanolab in 2018. It is very similar to the newer e-beam evaporator, bought in 2023, called the [[Specific Process Knowledge/Thin film deposition/10-pocket_e-beam_evaporator|E-beam Evaporator (10-pockets)]] in the LabManager system.
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== Name of equipment ==
A special feature of the 2018 E-beam evaporator (Temescal) is that it has an ion source for argon sputtering. This can be used either for ''in situ'' sample cleaning prior to deposition or to modify the film during deposition (ion beam assisted deposition or IBAD).


Write a short description of the equipment(s).  
In both Temescal e-beam evaporators, wafers are loaded into the top of the chamber, which acts as a loadlock as it can be separated from the rest of the chamber by a large gate valve. Deposition will happen on all loaded samples. Up to four 6" wafers /three 8" wafers may be loaded for line-of-sight deposition, or up to one 6" wafer for tilted deposition. Only one material can be deposited at a time, but layers of different metals may be deposited one after the other. The system contains 6 materials at a time which are exchanged weekly based on user requests. Please request materials well in advance.  


[[image:Cluster1.jpg|200x200px|right|thumb|Image(s) of the equipment(s)]]
'''The user manual, user APV, and contact information can be found in LabManager:'''
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[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=429 E Beam Evaporator (Temescal) in LabManager]


'''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:'''  
'''Training videos may be found here:'''  
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[https://www.youtube.com/playlist?list=PLjWVU97LayHCQWuQyHwddJnpsEYfQp0wf Training videos on Youtube]
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=326  RIE1 in LabManager]
 
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== Process information ==
== Process information ==


Link to process pages - e.g. one page for each material
[[/Acceptance Test|'''Acceptance Test information is found here''']]. Describes '''thickness uniformity''', '''side wall deposition''', '''sheet resistance''', and '''use of the ion source'''.


Example:
===Materials===
*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2|Etch of silicon using RIE]]
 
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2|Etch of silicon oxide using RIE]]
[[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium|Aluminium (Al)]]<br>
*[[Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE|Etch of silicon nitride using RIE]]
[[Specific Process Knowledge/Thin film deposition/Deposition of Chromium|Chromium (Cr)]]<br>
*[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of photo resist using RIE]]
[[Specific Process Knowledge/Thin film deposition/Deposition of Copper|Copper (Cu)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Germanium|Germanium (Ge)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Gold|Gold (Au)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum|Molybdenum (Mo)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Nickel|Nickel (Ni)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Niobium|Niobium (Nb)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Palladium|Palladium (Pd)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Platinum|Platinum (Pt)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Silver|Silver (Ag)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Tantalum|Tantalum (Ta)]]<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Tin|Tin (Sn)]] (we recommend using sputtering instead)<br>
[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium|Titanium (Ti)]]<br> 
[[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten|Tungsten (W)]]<br>
 
If your favorite metal is not on the list you are welcome to ask if we can develop a recipe. Note that Si as well as SiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub> and other oxides are available on the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam Evaporator (10-pockets)]].
 
===Thickness measurement, deposition rate and process control===
How the machine measures the thickness of the growing film using a quartz crystal monitor, how accurately is the control of the rate/thickness, and other useful information about e-beam deposition is found here: [[/Good to know about the Temescal#Deposition rate and thickness measurement accuracy|Thickness, rate, process control]].
 
===Particulates in the films===
Read about optimizing film quality including how to minimize the number of [[/Particulates in Temescal Au films|particulates in Au films in the Temescal]].
 
===Ion source===
[[/Ion source in E-beam evaporator (Temescal)|Information on the ion source]].


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="10"  
 
|-
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
!style="background:silver; color:black;" align="left"|Purpose
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:LightGrey; color:black"|Deposition of metals ||style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
*E-beam evaporation of metals
*Line-of-sight deposition
*Possible to tilt sample
*Possible to ion clean samples
*Possible to modify deposition by Ar ion bombardment
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
*10Å - 1µm* (for some materials) 
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|Deposition rate
|style="background:LightGrey; color:black"|  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Purpose 1
*0.5Å/s - 10Å/s
*Purpose 2
|-
|style="background:LightGrey; color:black"|Thickness uniformity
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Purpose 1
*up to 3 % Wafer-in-Wafer variation, Wafer-to-Wafer and Batch-to-Batch variation **
*Purpose 2
*Purpose 3
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Thickness accuracy
|style="background:LightGrey; color:black"|Response 1
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*May vary by up to about +/- 10 %
*Performance range 2
*Less accurate for films below 20 nm
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3
|-
|-
|style="background:LightGrey; color:black"|Response 2
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range
*Approximately room temperature.
|style="background:WhiteSmoke; color:black"|
Higher for refractive metals that require a lot of heat to evaporate, see above.
*Performance range
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Parameter 1
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
* Below 1*10<sup>-6</sup> mbar before deposition starts
* Below 5*10<sup>-6</sup> mbar during deposition
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|Source-substrate distance
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*69.85 cm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*Up to four 6" wafers per standard run
*<nowiki>#</nowiki> 50 mm wafers
*Or up to three 8" wafers
*<nowiki>#</nowiki> 100 mm wafers
*Up to one 6" wafer with tilt
*<nowiki>#</nowiki> 150 mm wafers
*Deposition on one side of the substrate
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Almost any that does not outgas and is approved in the cleanroom.
*Allowed material 2
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|-
| style="background:LightGrey; color:black"|Material allowed on the substrate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Almost any that does not outgas and is approved in the cleanroom.
*Allowed material 2
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*Allowed material 3
|-  
|-  
|}
|}


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'''*''' ''See table in manual with max. allowed rate and cumulative thickness. If you would like to deposit more than the limit in the table, please request permission from metal@nanolab.dtu.dk '''no matter if it is a single layer or a number of deposition runs adding up to a total thickness exceeding the limit'''. This is so we can ensure that enough material will be present and that the the machine can be cleaned up as needed as thick layers can cause flaking.''
 
'''**''' ''Defined as the ratio of the standard deviation to the average of the measurement made using the DektakXT. For further details see the acceptance test.''
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