Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide: Difference between revisions

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+=Hafnium oxide (HfO₂)=
+Hafnium oxide (HfO₂) is a wide‑bandgap, high‑κ dielectric (κ ≈ 20–25) valued for its large breakdown field, thermal/chemical stability, and excellent CMOS compatibility.
+It is deposited by magnetron sputtering for dense optical and protective coatings, and by atomic layer deposition (ALD) when ultra-thin, conformal, and thickness-precise films are required on high-aspect-ratio structures, such as FinFETs, 3D NAND, and trench capacitors.
+In semiconductors, it is the standard high‑κ gate dielectric in high‑κ/metal‑gate stacks, a capacitor dielectric in DRAM, a robust passivation/barrier layer, and the active switching medium in resistive RAM; doped or strain‑stabilized HfO₂ (e.g., with Zr, Si, Al) also exhibits ferroelectric/antiferroelectric phases, enabling FeFET non‑volatile memories and ferroelectric capacitors.
+Optically, HfO₂ offers a high refractive index with low absorption from the UV through the NIR and a high laser-damage threshold, supporting durable anti-reflective/high-reflective multilayers, mirrors, protective windows, and waveguide or cavity coatings.
+Beyond electronics and optics, its hardness, corrosion resistance, and radiation tolerance make it a suitable material for MEMS passivation, diffusion barriers, biocompatible protective layers, and coatings in harsh environments.
+Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone material for thin films across semiconductor, photonic, and engineering applications.
+== ALD Deposition of Hafnium Oxide ==
+Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1.
+More information about hafnium oxide deposition can be found here:
-== Deposition of Hafnium Oxide ==
+*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page|ALD deposition of HfO<sub>2</sub> in ALD1]]
-Thin films of hafnium oxide, HfO<sub>2</sub>, can both be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.
-More information about hafnium oxide deposition can be found here: for [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].
+*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD deposition of HfO<sub>2</sub> in ALD2]].
 ==Deposition of hafnium oxide==
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 |-
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-!
+|
 ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]]
-|
+![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]].
-*
 |-
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 |
 *Atomic Layer Deposition
+|
+*(Plasma enhanced) Atomic Layer Deposition
 |-
 |-style="background:LightGrey; color:black"
 !Stoichiometry
 |
-*HfO2
+*HfO<sub>2</sub>
 |
-*
+*HfO<sub>2</sub>
 |-
 |-style="background:WhiteSmoke; color:black"
 !Film Thickness
 |
-* 0 nm - 50 nm
+*0 nm - 100 nm
 |
-*
+*0 nm - 50 nm
 |-
 |-style="background:LightGrey; color:black"
 !Deposition rate
 |
-* 0.0827 nm/cycle on a flat sample
+* At 150 <sup>o</sup>C: 0.11 nm/cycle
-* 0.954-0.122 nm/cycle on a high aspect ratio structures
+* At 250 <sup>o</sup>C: 0.0827 nm/cycle
 |
-*
+* At 250 <sup>o</sup>C: 0.0804 nm/cycle
+* At 250 <sup>o</sup>C on trenches: 0.954-1.22 nm/cycle
 |-
 |-style="background:WhiteSmoke; color:black"
 !Step coverage
+|
+*Very good.
 |
 *Very good
-|
-*
 |-
 |-style="background:LightGrey; color:black"
-!Process Temperature
+!Temperature window
 |
-* 150 - 300<sup>o</sup>C
+*150 <sup>o</sup>C - 300 <sup>o</sup>C
 |
-*
+*150 <sup>o</sup>C - 300 <sup>o</sup>C
 |-
 |-style="background:LightGrey; color:black"
 !Substrate size
 |
-*Several small samples
+*1-5 100 mm wafers (only good uniformity for the top wafer)
-*1-5 50 mm wafers
+*1-5 150 mm wafer (only good uniformity for the top wafer)
-*1-5 100 mm wafers
+*1 200 mm wafer
-*1-5 150 mm wafer
+*Several smaller samples
 |
-*
+*1 100 mm wafer
+*1 150 mm wafer
+*1 200 mm wafer
+*Several smaller samples
 |-
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 *Silicon oxide, silicon nitride
 *Quartz/fused silica
-*Al, Al<sub>2</sub>O<sub>3</sub>
+*Metals (use dedicated carrier wafer)
-*Ti, TiO<sub>2</sub>
-*Other metals (use dedicated carrier wafer)
 *III-V materials (use dedicated carrier wafer)
 *Polymers (depending on the melting point/deposition temperature, use carrier wafer)
 |
-*
+*Silicon
+*Silicon oxide, silicon nitride
+*Quartz/fused silica
+*Metals (use dedicated carrier wafer)
+*III-V materials (use dedicated carrier wafer)
+*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
 |-
 |}