Latest revision as of 11:50, 3 February 2023

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Techniques, hardware and challenges common to all dry etch tools

This page contains information that is common to dry etch instruments.

Dry etch page	Description
Hardware comparison	Comparison of the different hardware setups
Using carrier wafer	Processing different sizes of substrates by using a carriers: bonding or not bonding
Optical Endpoint System	Using the OES technique to find endpoints and to diagnose plasmas
LASER Endpoint System	Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers)
Etch product volatility	Links to various tables with data on etch product volatility

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-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DryEtchProcessing click here]'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DryEtchProcessing click here]'''
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 This page contains information that is common to dry etch instruments.
 {|  border ="0" align="left" valign="top"
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 | style="background: #DCDCDC"| Using the OES technique to find endpoints and to diagnose plasmas
 |-
+| style="background: LightGray"| [[/LEP| LASER Endpoint System]]
+| style="background: #DCDCDC"| Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers)
+|-
+| style="background: LightGray"| [[/Data4dryetch| Etch product volatility]]
+| style="background: #DCDCDC"| Links to various tables with data on etch product volatility
+|-
 |}