Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions
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==Etching of Aluminium== | ==Etching of Aluminium== | ||
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Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]] | Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]] | ||
|Dry plasma etch of Al | |Dry plasma etch of Al | ||
|Sputtering of Al - pure physical etch | |Sputtering of Al - pure physical etch. | ||
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*~60-100nm/min | *~60-100nm/min | ||
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*~ | *~30nm/min (pure Al) | ||
| | | | ||
*~350 nm/min (depending on features size and etch load) | *~350 nm/min (depending on features size and etch load) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!'''Allowed materials''' | !'''Allowed materials''' | ||
|In bath: | |In 'Aluminium Etch' bath: | ||
*See Cross Contamination Sheet for | *See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login) | ||
In beaker: | In beaker: | ||
*Any material | *Any material | ||