Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan331-2: Difference between revisions

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== The Sinano3.31 recipe ==
== The Sinano3.31 recipe ==
<!-- revised 1/6-2015 by jmli -->
<!-- revised 1/6-2015 by jmli -->

Latest revision as of 15:16, 24 August 2021

The Sinano3.31 recipe

Recipe Sinano3.31
Recipe Gas BCl3 5 sccm, HBR 15 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 75 W PP
Temperature 50 degs
Hardware 30 mm Spacers
Time 60, 120 and 180 secs
Conditions Run ID 461, 462 and 463
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 190 nm zep
  • The results of the Sinano3.31 recipe
  • The 30 nm trenches etched 60 seconds
    The 30 nm trenches etched 60 seconds
  • The 60 nm trenches etched 60 seconds
    The 60 nm trenches etched 60 seconds
  • The 90 nm trenches etched 60 seconds
    The 90 nm trenches etched 60 seconds
  • The 120 nm trenches etched 60 seconds
    The 120 nm trenches etched 60 seconds
  • The 150 nm trenches etched 60 seconds
    The 150 nm trenches etched 60 seconds
  • The 30 nm trenches etched 120 seconds
    The 30 nm trenches etched 120 seconds
  • The 60 nm trenches etched 120 seconds
    The 60 nm trenches etched 120 seconds
  • The 90 nm trenches etched 120 seconds
    The 90 nm trenches etched 120 seconds
  • The 120 nm trenches etched 120 seconds
    The 120 nm trenches etched 120 seconds
  • The 150 nm trenches etched 120 seconds
    The 150 nm trenches etched 120 seconds
  • The 30 nm trenches etched 180 seconds
    The 30 nm trenches etched 180 seconds
  • The 60 nm trenches etched 180 seconds
    The 60 nm trenches etched 180 seconds
  • The 90 nm trenches etched 180 seconds
    The 90 nm trenches etched 180 seconds
  • The 120 nm trenches etched 180 seconds
    The 120 nm trenches etched 180 seconds
  • The 150 nm trenches etched 180 seconds
    The 150 nm trenches etched 180 seconds


After 60 seconds
Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 73 98 108 111 113 101 16
Sidewall angle degs 78 81 79 78 79 79 1
CD loss nm/edge -7 -21 -20 -15 -34 -19 10
CD loss foot nm/edge -1 -7 -6 -4 -7 -5 3
Bowing 10 7 12 8 9 9 2
Bottom curvature -34 -4 2 6 5 -5 17
Zep etch rate nm/min 47


After 120 seconds
Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 76 98 107 116 117 103 17
Sidewall angle degs 84 82 81 81 80 82 2
CD loss nm/edge -4 -16 -15 -13 -24 -15 7
CD loss foot nm/edge 1 -3 -1 -1 3 0 2
Bowing 12 21 18 27 22 20 5
Bottom curvature -17 -17 -6 10 12 -3 14
Zep etch rate nm/min 45


After 180 seconds
Nominal trench line width ' 30 60 90 150 Average Std. dev.
Etch rate nm/min 73 99 107 114 98 18
Sidewall angle degs 85 84 83 81 83 2
CD loss nm/edge -6 -15 -12 -25 -14 8
CD loss foot nm/edge 0 -1 2 2 1 2
Bowing 18 26 26 29 25 5
Bottom curvature -27 -27 -7 9 -13 17
Zep etch rate nm/min 36
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