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{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.
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Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.
We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.


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!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Method 1]]
![[Specific Process Knowledge/Thin film deposition/PECVD|Method 2]]
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*[[/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> etch using ICP metal]]
|-style="background:WhiteSmoke; color:black"
*[[/Al2O3 Etch with III-V ICP|Al<sub>2</sub>O<sub>3</sub> etch using III-V ICP]]
!Generel description
*[[/Al2O3 Etch using HF|Al<sub>2</sub>O<sub>3</sub> etch using HF]]
|Generel description - method 1
|Generel description - method 2
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|-style="background:LightGrey; color:black"
!Parameter 1
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*A
*B
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*A
*B
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!Parameter 2
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*A
*B
*C
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*A
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|-style="background:LightGrey; color:black"
!Substrate size
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*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
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*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
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|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
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*Allowed material 1
*Allowed material 2
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*Allowed material 1
*Allowed material 2
*Allowed material 3
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|}
 
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*[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
*[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]