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=Wafer Bonder 02=
[[Image:wafer bonder2.jpg|300x300px|thumb|Wafer Bonder 02: Positioned in cleanroom E-4]]
The Wafer bonder 02 is a system for bonding. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.  
The Wafer bonder 02 is a system for bonding. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.  


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==Process information==
==Process information==
[[Image:wafer bonder2.jpg|300x300px|thumb|Wafer Bonder 02: Positioned in cleanroom E-4]]


====Types of Bonding====
====Types of Bonding====
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*[[Specific Process Knowledge/Bonding/Fusion bonding|Fusion bonding]]
*[[Specific Process Knowledge/Bonding/Fusion bonding|Fusion bonding]]
*[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]]
*[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]]
 
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==Overview of the performance of the Wafer Bonder 02 and some process related parameters==
==Overview of the performance of the Wafer Bonder 02 and some process related parameters==


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*Silicon (oxy)nitride
*Silicon (oxy)nitride
*Poly Silicon
*Poly Silicon
*Metals: Au, Sn, Ag, Al, Ti.
*Metals: Au, Sn, Ag, Al, Ti
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Latest revision as of 18:17, 27 May 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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Wafer Bonder 02

Wafer Bonder 02: Positioned in cleanroom E-4

The Wafer bonder 02 is a system for bonding. 3 different types of bonding can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.

The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager: Equipment info in LabManager


Process information

Types of Bonding


Overview of the performance of the Wafer Bonder 02 and some process related parameters

Purpose Bonding
  • Eutectic bonding
  • Fusion bonding
  • Anodic bonding
Performance Alignment accuracy
  • ± 2 microns for IR alignment
  • ± 5 microns for backside alignment
Process parameter range Process Temperature
  • Room temperature to 500oC
Process pressure
  • ~510-4mbar - 1000mbar
Piston Force
  • Depending on the area, for 4" wafers 200-6000 mbar.
Substrates Batch size
  • One wafer per run
  • Pieces
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Poly Silicon
  • Metals: Au, Sn, Ag, Al, Ti