Specific Process Knowledge/Bonding/Eutectic bonding: Difference between revisions
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==Eutectic Bonding== | ==Eutectic Bonding== | ||
Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature | Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature | ||
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!Eutecticum | !Eutecticum | ||
!Eutectic temperature | !Eutectic temperature | ||
!Bonding temperature in | !Bonding temperature in Wafer Bonder 02 | ||
|- valign="top" | |- valign="top" | ||
|AuSi | |AuSi | ||
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Eutectic Bonding
Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390oC). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature
| Eutecticum | Eutectic temperature | Bonding temperature in Wafer Bonder 02 |
|---|---|---|
| AuSi | 365oC | 390oC |
| AuSn | <300oC | 300oC |
| AuSnNi | . | . |