Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions

Latest revision as of 15:36, 6 February 2023

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Etching Al₂O₃ can be done both chemically (wet) and by dry etching. Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al. We have done some test of Al₂O₃ in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.

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+'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
+'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''
+Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.
-=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
+Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.
+We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.
-*[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
+*[[/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> etch using ICP metal]]
-*[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]
+*[[/Al2O3 Etch with III-V ICP|Al<sub>2</sub>O<sub>3</sub> etch using III-V ICP]]
+*[[/Al2O3 Etch using HF|Al<sub>2</sub>O<sub>3</sub> etch using HF]]