Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure click here]'''
{{cc-nanolab}}
 
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/UVExposure click here]'''
 
[[Category: Equipment|Lithography exposure]]
[[Category: Lithography|Exposure]]
 
__TOC__


== UV Exposure Comparison Table ==
== UV Exposure Comparison Table ==




{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: MA6-1|Aligner: MA6-1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Aligner: MA6-2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner: 6inch]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 01|Aligner: Maskless 01]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]] <span style="color:#FF0000">DECOMISSIONED!</span></b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 02|Aligner: Maskless 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 03|Aligner: Maskless 03]]</b>
<!--|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>-->


|-
|-
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*(DUV exposure)
*(DUV exposure)
*Bond alignment
*Bond alignment
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Top Side Alignment
*Back Side Alignment
*Back Side Alignment
*UV exposure  
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Top Side Alignment
*Back Side Alignment
*Maskless UV exposure
<!--|style="background:WhiteSmoke; color:black"|
*UV exposure
*UV exposure
|style="background:WhiteSmoke; color:black"|
*DUV exposure-->
*UV exposure
*DUV exposure


|-
|-
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|style="background:LightGrey; color:black"|Minimum feature size
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 1.0µm
~1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 0.5µm
~1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.25µm
~1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*2µm
~1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
~1 µm
<!--|style="background:WhiteSmoke; color:black"|-->
|-
|-
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
*350W Hg lamp
*i-line filter (365nm notch filter), intensity in Constant Intensity mode: 7mW/cm<sup>2</sup> @ 365nm
*i-line filter (365nm notch filter)<br>Intensity in Constant Intensity mode:<br>8mW/cm<sup>2</sup> @ 365nm
*303nm filter optional
*303nm filter optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*500W Hg-Xe lamp
*500W Hg-Xe lamp
*i-line filter (365nm notch filter), intensity in Constant Intensity mode: ~13mW/cm<sup>2</sup> @ 365nm
*i-line filter (365nm notch filter)<br>Intensity in Constant Intensity mode:<br>11mW/cm<sup>2</sup> @ 365nm
*UV350 optics optional
*UV350 optics optional
*UV250 optics optional
*UV250 optics optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
365nm LED
*SU8 filter (long-pass), intensity in Constant Power mode: 7mW/cm<sup>2</sup> @ 365nm
*i-line filter optional
 
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
375nm laserdiodes
*the entire 350W Hg-lamp spectrum, intensity in Constant Power mode: 5mW/cm<sup>2</sup> @ 365nm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
405nm laserdiodes
<!--|style="background:WhiteSmoke; color:black"|
*1000 W Hg-Xe lamp
*1000 W Hg-Xe lamp
*near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
*Dichroic mirror:
**Near UV (350-450nm)
**Mid UV (260-320nm)
**Deep UV (220-260nm)-->


|-
|-
|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact  
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Projection:
**Pneumatic auto-focus
<!--|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Flood exposure
*Proximity exposure with home-made chuck and maskholder
*Proximity exposure with home-made chuck and maskholder
*Inclined exposure
*Rotating exposure-->


|-
|-
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 small sample, down to 10x10 mm<sup>2</sup>
*1 50 mm wafer
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 small sample, down to 10x10 mm<sup>2</sup>
*1 50 mm wafer
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 50 mm wafers
*1 small sample, down to 5x5 mm<sup>2</sup>
*1 100 mm wafers
*1 50 mm wafer
*1-25 150 mm wafers with automatic handling
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 small sample, down to 3x3 mm<sup>2</sup>
*1 50 mm wafer
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
*1 200 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*all sizes up to 8inch
*1 small sample, down to 5x5 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
<!--|style="background:WhiteSmoke; color:black"|
*all sizes up to 8inch-->
 
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
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*Dedicated chuck for III-V materials
*Dedicated chuck for III-V materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except III-V materials, copper and steel substrates, and type IV films
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*III-V compounds
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
*All cleanroom materials
<!--|style="background:WhiteSmoke; color:black"|
*All cleanroom materials-->
|-  
|-  
|}
|}


<br clear="all" />
==Aligner: MA6-1==
 
[[Image:KSAligner in E-4.jpg|300x300px|thumb|The Aligner: MA6-1 is located in PolyFabLab]]
== KS Aligner ==
[[Image:KSAligner in E-4.jpg|300x300px|thumb|The KS Aligner is placed in E-4]]
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner click here]'''


SUSS Mask Aligner MA6 is designed for high resolution photolithography.  
SUSS Mask Aligner MA6 is designed for high resolution photolithography.  
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Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.


'''Training videos: [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.053_Aligner_MA6_part1_operation-720p.mp4 Operation] [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.053_Aligner_MA6_part2_aligning-720p.mp4 Alignment]''' (on Aligner: MA6-2, but KS Aligner is the same model)


'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager].'''
'''Training videos:'''
 
[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]
 
[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]
 
 
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager] - '''requires login'''
 
===Exposure dose===
[[Specific Process Knowledge/Lithography/Resist#Aligner: MA6-1|Information on UV exposure dose]]


===Process information===
===Process information===
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.
The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.


*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for KS Aligner'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=44 The QC procedure for Aligner: MA6-1] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=44 The newest QC data for Aligner: MA6-1] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
 
! QC Recipe:
! Manual intensity measurement
|-
|Measurement area
|4"
|-
|Number of measurements
|5
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: MA6-1
|-
|Nominal intensity
|8 mW/cm<sup>2</sup> @ 365 nm
|-
|Intensity deviation from nominal
|≤5%
|-
|Intensity non-uniformity
|≤2%
|-
|}
|-
|}
Power supply and/or lamp will be adjusted if intensity is outside the limit.
|}


=== Equipment performance and process related parameters ===
===Equipment performance and process related parameters===


{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  




!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
Alignment and UV exposure
|-
|-
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|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
|-
| style="background:LightGrey; color:black"|Exposure light/filters
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*broadband (i-, g-, h-line)
*broadband (i-, g-, h-line)
*365 nm (i-line)
*365 nm (i-line)
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|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1.25µm
down to 1.25µm
|-
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
*5x5 inch
*7x7 inch
*7x7 inch
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|-
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA)
*Top side (TSA)
*Backside (BSA)
*Backside (BSA)
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
* small pieces 1x1cm
* small pieces 1x1cm
* 50 mm wafers
* 50 mm wafers
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|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials except copper and steel
All cleanroom materials


Dedicated chuck for III-V materials
Dedicated chuck for III-V materials
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
1  
1  
|-  
|-  
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<br clear="all" />
<br clear="all" />


==Aligner: MA6 - 2==
==Aligner: MA6-2==
 
[[Image:AlignerMA6-2 in E-4.jpg|300x300px|thumb|The Aligner: MA6-2 is placed in E-4]]
[[Image:AlignerMA6-2 in E-4.jpg|300x300px|thumb|The Aligner: MA6 - 2 is placed in E-4]]
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2 click here]'''


The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography.  
The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography.  
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The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.
The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.


'''Training videos: [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.053_Aligner_MA6_part1_operation-720p.mp4 Operation] [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.053_Aligner_MA6_part2_aligning-720p.mp4 Alignment]'''


'''The user manual, APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager].'''
'''Training videos:'''
 
[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]
 
[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]
 
 
The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager] - '''requires login'''
 
===Exposure dose===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_MA6-2|Information on UV exposure dose]]


===Process information===
===Process information===
The Aligner: MA6 - 2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.


The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: MA6-2'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=339 The QC procedure for Aligner: MA6-2] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=339 The newest QC data for Aligner: MA6-2] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"


*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
! QC Recipe:
! Manual intensity measurement
|-
|Measurement area
|4"
|-
|Number of measurements
|5
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: MA6-2
|-
|Nominal intensity
|11 mW/cm<sup>2</sup> @ 365 nm
|-
|Intensity deviation from nominal
|≤5%
|-
|Intensity non-uniformity
|≤2%
|-
|}
|-
|}
Power supply and/or lamp will be adjusted if intensity is outside the limit.
|}
 
===Alignment===
'''Top Side Alignment:'''
*TSA microscope standard objectives: 5X, and 10X (20X available)
*TSA microscope special objectives: 11.25X offset (for smaller separation)
 
*Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
*Maximum distance between TSA microscope objectives: 160 mm
*TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)
 
'''BackSide Alignment:'''
*Minimum distance between BSA microscope objectives: 15 mm
*Maximum distance between BSA microscope objectives: 100 mm
*BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
*BSA chuck view ranges:
**2": X +/-  8-22mm; Y +/- 0-6mm
**4": X +/- 14-46mm; Y +/- 0-10mm
**6": X +/- 14-69mm; Y +/- 0-10mm
 
 
'''Microscope field of view (W x H, splitfield):'''
*TSA 5X
**Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
**Camera: 350µm x 500µm (700µm x 500µm full field)
*TSA 10X
**Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
**Camera: 150µm x 250µm (350µm x 250µm full field)
*TSA special
**Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
**Camera: 150µm x 200µm (300µm x 200µm full field)
*BSA camera
**Low: 1.5mm x 2mm (3mm x 2mm full field)
**High: 450µm x 650µm (950µm x 650µm full field)


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===


{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
 


!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Mask alignment and UV exposure, potentially DUV exposure <sup>1)</sup>
Mask alignment and UV exposure, potentially DUV exposure <sup>1)</sup>


Line 246: Line 409:


|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
|-
| style="background:LightGrey; color:black"|Exposure light/filters
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*broadband (i-, g-, h-line)
*broadband (i-, g-, h-line)
*365 nm (i-line)
*365 nm (i-line)
Line 257: Line 420:
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Typically 1.25 µm, possibly down to 0.8 µm <sup>1)</sup>
Typically 1.25 µm, possibly down to 0.8 µm <sup>1)</sup>
|-
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
*5x5 inch
*7x7 inch
*7x7 inch
Line 267: Line 430:
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA)
*Top side (TSA)
*Backside (BSA)
*Backside (BSA)
Line 273: Line 436:
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
* small pieces 1x1cm
* small pieces 1x1cm
* 50 mm wafers
* 50 mm wafers
Line 280: Line 443:
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials except copper and steel
All cleanroom materials except copper and steel


Line 286: Line 449:
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
1  
1  
|-  
|-  
|}
|}


<sup>1)</sup> Not available yet.
<sup>1)</sup> Not available yet. Requires tool change. Would require safety investigation (and a dedicated project) to become available.
 
===Light intensity and uniformity after lamp ignition===
 
[[image:MA6-2_light_intensity_and_uniformity_from_ignition.png|400px|right|thumb|Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.]]
 
The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.
 
If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.
 
The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.


<br clear="all" />
<br clear="all" />


== Aligner-6inch ==
== Aligner: Maskless 01 ==
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch click here]'''
 
[[Image:Heidelberg_MLA100.jpg|300x300px|thumb|Aligner: Maskless 01 positioned in E-5 (2017)]]
 
The logon password for the PC is "mla" (without quotation marks).


[[Image:EVG620.jpg|300x300px|thumb|right|Aligner-6inch EVG620 is placed in E-5]]
The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017.
It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask.
The system offers top side alignment with high accuracy.


Aligner-6inch, EVG620 aligner,  is designed for high resolution photolithography.
The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates.
The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information. 
Available exposure mode: proximity, soft, hard and vacuum contact.
Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.


'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=201 LabManager]'''
The user manual and contact information can be found in LabManager:


===Process information===
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager] - '''requires login'''
The Aligner-6inch has a long pass filter designed for SU-8 exposure installed. The SU-8 filter has no transmission in the 250-330nm range, and close to full transmission in the 400-500nm range. In the 350-370nm range, the transmission is approximately 0.5. This results in a broadband exposure light consisting of the i-line (365nm), the h-line (405nm), and the g-line (435nm) from the Hg spectrum. Dependent on the spectral sensitivity of the resist, the optimal dose may be decreased compared to i-line exposure on the KS-Aligner.
 
===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_01|Information on UV exposure dose]]


*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters|Process parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Substrate_positioning|Substrate positioning]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]]


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===


{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
 


!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure, potentially DUV exposure
Alignment and UV exposure  
|-
|-


!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance


|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
365nm (LED), FWHM=8nm
|-
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*broadband (i-, g-, h-line)
Pneumatic
*SU8 filter (½i-, g-, h-line)
*365 nm (i-line)
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1.25µm
down to 1µm
|-
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
*'''GDS-II'''
*7x7 inch
*CIF
*DXF
*Gerber
*HIMT format
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA)
Top side only
*Backside (BSA)
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
* 50 mm wafers
* maximum writing area: 125x125 mm<sup>2</sup>
* 100 mm wafers
* 150 mm wafer
* 150 mm wafers
* 100 mm wafer
* 50 mm wafer
* pieces down to 5x5 mm<sup>2</sup>
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All substrates except III-V, copper, and steel
All cleanroom materials
 
All films except type IV
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
1  
1  
|-  
|-  
Line 371: Line 555:
<br clear="all" />
<br clear="all" />


== Aligner: Maskless 01 ==
==Aligner: Maskless 02==
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).
 


===This section is under construction [[Image:section under construction.jpg|70px]]===
'''Special features'''
*Optical Autofocus
*Backside Alignment
*Basic Gray Scale Exposure
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*High Aspect Ratio Mode for exposure of thick resists
*200 x 200 mm exposure field
*Separate conversion PC


'''Feedback to this section''': '''[mailto:lithography@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_01 click here]'''


The K&W MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.
'''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]'''


Specific use of the mask aligner can be found in the standard resist recipes.
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager] - '''requires login'''


[[Image:IMG_3078.jpg|300x300px|thumb|III-V Aligner positioned in A-5]]
===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_02|Information on UV exposure dose]]


'''The user manual and contact information can be found in LabManager:'''
===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing|Process information]]===
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Alignment|Alignment]]


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===


{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  




!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure  
Alignment and UV exposure  
|-
|-


!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance


|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Direct writing
Projection
|-
|-
| style="background:LightGrey; color:black"|Exposure light/filters
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
365 nm (LED)
*375 nm<br>
(laser diode arrays)
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
*Optical
*Pneumatic
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 3µm
down to 1 µm
|-
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDSII'''
*'''GDS-II'''
*CIF
*DXF
*DXF
*CIF
*Gerber
*Gerber
*HIMT format
*HIMT format
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Top side only
*Top side alignment
*Backside alignment
*Field alignment (chip-by-chip TSA)


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 200x200 mm<sup>2</sup>
* 200 mm wafer
* 150 mm wafer
* 150 mm wafer
* 100 mm wafer
* 100 mm wafer
* 50 mm wafer
* 50 mm wafer
* pieces down to 5x5 mm2
* pieces down to 3x3 mm<sup>2</sup> <sup>1)</sup>
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Silicon and glass
All cleanroom materials
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
1  
1  
|-  
|-  
|}
|}
<sup>1)</sup> with optical autofocus


<br clear="all" />
<br clear="all" />


==Inclined UV Lamp==
==Aligner: Maskless 03==
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.
 
 
'''Special features:'''
*Backside Alignment
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*Separate conversion PC (Power PC)
 
 
'''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]'''
 
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=464 LabManager] - '''requires login'''
 
===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_03|Information on UV exposure dose]]
 
===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Process_Parameters|Process Parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Alignment|Alignment]]
 
=== Equipment performance and process related parameters ===
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-
 
!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
405nm<br>(laser diode array)
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
Pneumatic
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1 µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side alignment
*Backside alignment
*Field alignment (chip-by-chip TSA)


'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Inclined_UV_lamp click here]'''
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 150x150 mm<sup>2</sup>
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 5x5 mm<sup>2</sup>
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1
|-
|}


[[Image:Inclined UV lamp_1.jpg|300x300px|right|thumb|Inclined UV lamp is placed in E-5]]
<br clear="all" />


The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.
<!--
==Inclined UV Lamp==
[[Image:Inclined UV lamp_1.jpg|300x300px|right|thumb|Inclined UV lamp is placed in CX-1]]


The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Danchip workshop.
The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can also be used to make an inclined exposure in air or in the media tank. The tool was purchased in February 2009 from Newport. The exposure lamp official name is Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and built at DTU Nanolab workshop.


The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.  
The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made for safety reasons and the timer/controller was built to control exposure time.  


The technical specification and the general outline of the equipment can be found in LabManager.   
The technical specification and the general outline of the equipment can be found in LabManager.   


'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=259 LabManager].'''


The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=259 LabManager] - '''requires login'''
<br clear="all" />
<br clear="all" />


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===


{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  




!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
UV exposure  
UV exposure  
|-
|-
Line 476: Line 768:


|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Flood exposure
*Flood exposure
*Proximity exposure with mask possible for 4inch substrate
*Proximity exposure with mask possible for 4inch substrate
*Inclined exposure
*Rotating exposure
|-
|-
| style="background:LightGrey; color:black"|Exposure light/filters
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
* Near UV(350-450nm)
* Near UV(350-450nm)
* Mid UV (260-320nm)
* Mid UV (260-320nm)
Line 488: Line 782:
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|


|-
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
5x5inch optinal
5x5inch optinal
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
No alignment possible
No alignment possible


Line 502: Line 796:
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Up to 8inch substrates, different shapes  
Up to 8inch substrates, different shapes  
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
All cleanroom materials
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
1  
1  
|-  
|-  
Line 516: Line 810:


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<br clear="all" />
-->

Latest revision as of 15:53, 13 November 2024

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

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UV Exposure Comparison Table

Equipment Aligner: MA6-1 Aligner: MA6-2 Aligner: Maskless 01 Aligner: Maskless 02 Aligner: Maskless 03
Purpose
  • Top Side Alignment
  • Back Side Alignment
  • UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • UV exposure
  • (DUV exposure)
  • Bond alignment
  • Top Side Alignment
  • Maskless UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • Maskless UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • Maskless UV exposure
Performance Minimum feature size

~1 µm

~1 µm

~1 µm

~1 µm

~1 µm

Exposure light/filters/spectrum
  • 350W Hg lamp
  • i-line filter (365nm notch filter)
    Intensity in Constant Intensity mode:
    8mW/cm2 @ 365nm
  • 303nm filter optional
  • 500W Hg-Xe lamp
  • i-line filter (365nm notch filter)
    Intensity in Constant Intensity mode:
    11mW/cm2 @ 365nm
  • UV350 optics optional
  • UV250 optics optional

365nm LED

375nm laserdiodes

405nm laserdiodes

Exposure mode
  • Flood exposure
  • Proximity
  • Contact:
    • Soft contact
    • Hard contact
    • Vacuum contact
  • Flood exposure
  • Proximity
  • Contact:
    • Soft contact
    • Hard contact
    • Vacuum contact
  • Projection:
    • Pneumatic auto-focus
  • Projection:
    • Optical auto-focus
    • Pneumatic auto-focus
  • Projection:
    • Pneumatic auto-focus
Substrates Batch size
  • 1 small sample, down to 10x10 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample, down to 10x10 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample, down to 5x5 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample, down to 3x3 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 200 mm wafer
  • 1 small sample, down to 5x5 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
Allowed materials
  • All cleanroom materials except copper and steel
  • Dedicated 2inch chuck for III-V materials
  • All cleanroom materials except copper and steel
  • Dedicated chuck for III-V materials
  • All cleanroom materials
  • All cleanroom materials
  • All cleanroom materials

Aligner: MA6-1

The Aligner: MA6-1 is located in PolyFabLab

SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.


Training videos:

Operation

Alignment


The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Exposure dose

Information on UV exposure dose

Process information

The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.

Quality Control (QC)

Quality Control (QC) for KS Aligner
QC Recipe: Manual intensity measurement
Measurement area 4"
Number of measurements 5
QC limits Aligner: MA6-1
Nominal intensity 8 mW/cm2 @ 365 nm
Intensity deviation from nominal ≤5%
Intensity non-uniformity ≤2%

Power supply and/or lamp will be adjusted if intensity is outside the limit.

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

vacuum contact, hard contact, soft contact, proximity, flood exposure

Exposure light/filters
  • broadband (i-, g-, h-line)
  • 365 nm (i-line)
  • 303 nm
Minimum structure size

down to 1.25µm

Mask size
  • 5x5 inch
  • 7x7 inch
  • special holder for 4 x 2" designs on 5x5 inch
Alignment modes
  • Top side (TSA)
  • Backside (BSA)
Substrates Substrate size
  • small pieces 1x1cm
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials

Dedicated chuck for III-V materials

Batch

1


Aligner: MA6-2

The Aligner: MA6-2 is placed in E-4

The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.

The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.


Training videos:

Operation

Alignment


The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager - requires login

Exposure dose

Information on UV exposure dose

Process information

The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.

Quality Control (QC)

Quality Control (QC) for Aligner: MA6-2
QC Recipe: Manual intensity measurement
Measurement area 4"
Number of measurements 5
QC limits Aligner: MA6-2
Nominal intensity 11 mW/cm2 @ 365 nm
Intensity deviation from nominal ≤5%
Intensity non-uniformity ≤2%

Power supply and/or lamp will be adjusted if intensity is outside the limit.

Alignment

Top Side Alignment:

  • TSA microscope standard objectives: 5X, and 10X (20X available)
  • TSA microscope special objectives: 11.25X offset (for smaller separation)
  • Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
  • Maximum distance between TSA microscope objectives: 160 mm
  • TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)

BackSide Alignment:

  • Minimum distance between BSA microscope objectives: 15 mm
  • Maximum distance between BSA microscope objectives: 100 mm
  • BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
  • BSA chuck view ranges:
    • 2": X +/- 8-22mm; Y +/- 0-6mm
    • 4": X +/- 14-46mm; Y +/- 0-10mm
    • 6": X +/- 14-69mm; Y +/- 0-10mm


Microscope field of view (W x H, splitfield):

  • TSA 5X
    • Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
    • Camera: 350µm x 500µm (700µm x 500µm full field)
  • TSA 10X
    • Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
    • Camera: 150µm x 250µm (350µm x 250µm full field)
  • TSA special
    • Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
    • Camera: 150µm x 200µm (300µm x 200µm full field)
  • BSA camera
    • Low: 1.5mm x 2mm (3mm x 2mm full field)
    • High: 450µm x 650µm (950µm x 650µm full field)

Equipment performance and process related parameters

Purpose

Mask alignment and UV exposure, potentially DUV exposure 1)

Bond alignment

Performance Exposure mode

vacuum contact, hard contact, soft contact, proximity, flood exposure

Exposure light/filters
  • broadband (i-, g-, h-line)
  • 365 nm (i-line)
  • "UV300" (280-350 nm)
  • DUV (240 nm) 1)
Minimum structure size

Typically 1.25 µm, possibly down to 0.8 µm 1)

Mask size
  • 5x5 inch
  • 7x7 inch
  • special holder for 4 x 2" designs on 5x5 inch
Alignment modes
  • Top side (TSA)
  • Backside (BSA)
Substrates Substrate size
  • small pieces 1x1cm
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials except copper and steel

Dedicated chuck for III-V materials

Batch

1

1) Not available yet. Requires tool change. Would require safety investigation (and a dedicated project) to become available.

Light intensity and uniformity after lamp ignition

Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.

The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.

If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.

The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.


Aligner: Maskless 01

Aligner: Maskless 01 positioned in E-5 (2017)

The logon password for the PC is "mla" (without quotation marks).

The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The system offers top side alignment with high accuracy.


The user manual and contact information can be found in LabManager:

Equipment info in LabManager - requires login

Exposure dose and defocus

Information on UV exposure dose

Process information

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light

365nm (LED), FWHM=8nm

Focusing method

Pneumatic

Minimum structure size

down to 1µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes

Top side only

Substrates Substrate size
  • maximum writing area: 125x125 mm2
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 5x5 mm2
Allowed materials

All cleanroom materials

Batch

1


Aligner: Maskless 02

MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).


Special features

  • Optical Autofocus
  • Backside Alignment
  • Basic Gray Scale Exposure
  • Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
  • High Aspect Ratio Mode for exposure of thick resists
  • 200 x 200 mm exposure field
  • Separate conversion PC


Training videos

Equipment info in LabManager - requires login

Exposure dose and defocus

Information on UV exposure dose

Process information

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light
  • 375 nm

(laser diode arrays)

Focusing method
  • Optical
  • Pneumatic
Minimum structure size

down to 1 µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes
  • Top side alignment
  • Backside alignment
  • Field alignment (chip-by-chip TSA)
Substrates Substrate size
  • maximum writing area: 200x200 mm2
  • 200 mm wafer
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 3x3 mm2 1)
Allowed materials

All cleanroom materials

Batch

1

1) with optical autofocus


Aligner: Maskless 03

MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.


Special features:

  • Backside Alignment
  • Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
  • Separate conversion PC (Power PC)


Training videos

Equipment info in LabManager - requires login

Exposure dose and defocus

Information on UV exposure dose

Process information

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light

405nm
(laser diode array)

Focusing method

Pneumatic

Minimum structure size

down to 1 µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes
  • Top side alignment
  • Backside alignment
  • Field alignment (chip-by-chip TSA)
Substrates Substrate size
  • maximum writing area: 150x150 mm2
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 5x5 mm2
Allowed materials

All cleanroom materials

Batch

1