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{{cc-nanolab}}
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Wafer_Bonder_02 click here]'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Wafer_Bonder_02 click here]'''
 
<br>
 
<br>
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=  
=Wafer Bonder 02=
[[Image:EVG NIL.jpg|300x300px|thumb|EVG NIL: positioned in D-4]]
[[Image:wafer bonder2.jpg|300x300px|thumb|Wafer Bonder 02: Positioned in cleanroom E-4]]
The EVG NIL is a system for imprinting in polymers (Hot embossing), and for bonding on wafer scale. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. In principle it is also possible to align the substrate and stamp before imprint, but it is much more difficult.
The Wafer bonder 02 is a system for bonding. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.  
 
It is possible to fill bonded cavities with a desired gas. At the moment we have SF<sub>6</sub> on the system, but if you would like another one, please contact Rune Christiansen.  


'''The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager:'''
'''The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=153| LabManager]
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=366| LabManager]


<br clear="all" />
<br clear="all" />
==Process information==


==Process information==
====Types of Bonding====
====Types of Bonding====
*[[Specific Process Knowledge/Bonding/Eutectic bonding|Eutectic bonding]]   
*[[Specific Process Knowledge/Bonding/Eutectic bonding|Eutectic bonding]]   
*[[Specific Process Knowledge/Bonding/Fusion bonding|Fusion bonding]]
*[[Specific Process Knowledge/Bonding/Fusion bonding|Fusion bonding]]
*[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]]
*[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]]
 
<br>
 
==Overview of the performance of the Wafer Bonder 02 and some process related parameters==
====Imprint information====
*[[Specific Process Knowledge/Imprinting|Imprinting]]
 
==Overview of the performance of the EVG NIL and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="10"  
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Imprint and bonding
|style="background:LightGrey; color:black"|Bonding
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Eutectic bonding
*Eutectic bonding
*Fusion bonding
*Fusion bonding
*Anodic bonding
*Anodic bonding
*Imprinting
|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="left"|Performance
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*&plusmn; 5 microns for IR alignment
*&plusmn; 2 microns for IR alignment
*&plusmn; 10 microns for backside alignment
*&plusmn; 5 microns for backside alignment
|-
|-
|-
|-
Line 49: Line 44:
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~5<math>\cdot</math>10<sup>-4</sup>mbar - 2000mbar
*~5<math>\cdot</math>10<sup>-4</sup>mbar - 1000mbar
|-
|-
|style="background:LightGrey; color:black"|Piston Force
|style="background:LightGrey; color:black"|Piston Force
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Depending on the area, for 4" wafers 200-20000N.  
*Depending on the area, for 4" wafers 200-6000 mbar.  
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*One 4" or 6" wafer per run
*One wafer per run
*Pieces are only allowed with speciel permission 
*Pieces  
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
Line 72: Line 67:
*Silicon (oxy)nitride
*Silicon (oxy)nitride
*Poly Silicon
*Poly Silicon
*Photoresist
*Metals: Au, Sn, Ag, Al, Ti
*PMMA
*TOPAS
*SU-8
*Metals: Au, Sn, Ag, Al, Ti.
|-  
|-  
|}
|}

Latest revision as of 18:17, 27 May 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Wafer Bonder 02

Wafer Bonder 02: Positioned in cleanroom E-4

The Wafer bonder 02 is a system for bonding. 3 different types of bonding can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.

The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager: Equipment info in LabManager


Process information

Types of Bonding


Overview of the performance of the Wafer Bonder 02 and some process related parameters

Purpose Bonding
  • Eutectic bonding
  • Fusion bonding
  • Anodic bonding
Performance Alignment accuracy
  • ± 2 microns for IR alignment
  • ± 5 microns for backside alignment
Process parameter range Process Temperature
  • Room temperature to 500oC
Process pressure
  • ~5⋅10-4mbar - 1000mbar
Piston Force
  • Depending on the area, for 4" wafers 200-6000 mbar.
Substrates Batch size
  • One wafer per run
  • Pieces
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Poly Silicon
  • Metals: Au, Sn, Ag, Al, Ti
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