Specific Process Knowledge/Bonding/Wafer Bonder 02: Difference between revisions
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[[Image: | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Wafer_Bonder_02 click here]''' | ||
The | <br> | ||
<br> | |||
=Wafer Bonder 02= | |||
[[Image:wafer bonder2.jpg|300x300px|thumb|Wafer Bonder 02: Positioned in cleanroom E-4]] | |||
The Wafer bonder 02 is a system for bonding. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces. | |||
'''The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager:''' | '''The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager:''' | ||
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach= | Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=366| LabManager] | ||
<br clear="all" /> | <br clear="all" /> | ||
==Process information== | |||
====Types of Bonding==== | ====Types of Bonding==== | ||
*[[Specific Process Knowledge/Bonding/Eutectic bonding|Eutectic bonding]] | *[[Specific Process Knowledge/Bonding/Eutectic bonding|Eutectic bonding]] | ||
*[[Specific Process Knowledge/Bonding/Fusion bonding|Fusion bonding]] | *[[Specific Process Knowledge/Bonding/Fusion bonding|Fusion bonding]] | ||
*[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]] | *[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]] | ||
<br> | |||
==Overview of the performance of the Wafer Bonder 02 and some process related parameters== | |||
==Overview of the performance of the | |||
{| border="2" cellspacing="0" cellpadding="10" | {| border="2" cellspacing="0" cellpadding="10" | ||
|- | |- | ||
!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Bonding | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Eutectic bonding | *Eutectic bonding | ||
*Fusion bonding | *Fusion bonding | ||
*Anodic bonding | *Anodic bonding | ||
|- | |- | ||
!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left"|Performance | ||
|style="background:LightGrey; color:black"|Alignment accuracy | |style="background:LightGrey; color:black"|Alignment accuracy | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*± | *± 2 microns for IR alignment | ||
*± | *± 5 microns for backside alignment | ||
|- | |- | ||
|- | |- | ||
| Line 46: | Line 44: | ||
|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*~5<math>\cdot</math>10<sup>-4</sup>mbar - | *~5<math>\cdot</math>10<sup>-4</sup>mbar - 1000mbar | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Piston Force | |style="background:LightGrey; color:black"|Piston Force | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Depending on the area, for 4" wafers 200- | *Depending on the area, for 4" wafers 200-6000 mbar. | ||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*One | *One wafer per run | ||
*Pieces | *Pieces | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
| Line 69: | Line 67: | ||
*Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
*Poly Silicon | *Poly Silicon | ||
*Metals: Au, Sn, Ag, Al, Ti | |||
*Metals: Au, Sn, Ag, Al, Ti | |||
|- | |- | ||
|} | |} | ||