Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions
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'''Feedback to this page''': '''[mailto: | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Palladium&action=edit click here]''' | ||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
===Palladium deposition=== | |||
Palladium can be deposited by e-beam evaporation or DC sputtering at DTU Nanolab. | |||
Palladium | ==Sputtering of Palladium== | ||
Palladium may be sputter deposited in the sputter-system (Lesker). See process results here: | |||
*[[/Pd sputtering in Sputter System (Lesker) |Pd sputtering in Sputter System (Lesker)]] | |||
==Equipment comparison== | |||
In the chart below you can compare the different deposition equipment: | |||
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! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific_Process_Knowledge/Thin_film_deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]]) | |||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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| E-beam deposition of Pd | | E-beam deposition of Pd | ||
| E-beam deposition of Pd | | E-beam deposition of Pd | ||
| Sputter deposition of Pd | |||
| Sputter deposition of Pd | |||
|- | |- | ||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
| | |Ar ion source | ||
|none | |||
|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
| | |10 Å - 600 nm* | ||
| | |10 Å - 600 nm* | ||
|10 Å - 600 nm* | |||
|10 Å - ? ''discuss with staff'' | |||
|- | |- | ||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
| | |0.5 Å/s to 10Å/s | ||
| | |2 Å/s to 10Å/s | ||
|Up to 4.3 Å/s | |||
| Not yet known - discuss with staff | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Batch size | ! Batch size | ||
| | | | ||
*Up to | *Up to 4x6" wafers | ||
*smaller pieces | *Up to 3x8" wafers (ask for holder) | ||
*smaller wafers and pieces | |||
| | |||
*Up to 6x6" wafers (deposition on one wafer at the time) | |||
*Up to 6x4" wafers (deposition on one wafer at the time) | |||
*smaller wafers and pieces | |||
| | |||
*1x4" wafer or | |||
*1x6" wafer or | |||
*several small samples | |||
| | | | ||
* | *Up to 10x4" or 6" wafers | ||
*Many smaller pieces | |||
* | |||
|- | |- | ||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
!Allowed materials | !Allowed materials | ||
| | | | ||
* Silicon oxide | *Silicon oxide | ||
* Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* Photoresist | *Photoresist | ||
* PMMA | *PMMA | ||
* Mylar | *Mylar | ||
* | *Metals | ||
* Metals | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
| | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Photoresist | |||
*PMMA | |||
*Mylar | |||
*Metals | |||
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | |||
| | | | ||
* Silicon oxide | *Silicon oxide | ||
* Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* Photoresist | *Photoresist | ||
* PMMA | *PMMA | ||
* Mylar | *Mylar | ||
*Metals | |||
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | |||
| Almost any that do not degas | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| | |||
| | |||
| | | | ||
| | | | ||
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|} | |} | ||
'''*''' '' | '''*''' ''If depositing more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.'' |
Latest revision as of 10:10, 9 June 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Palladium deposition
Palladium can be deposited by e-beam evaporation or DC sputtering at DTU Nanolab.
Sputtering of Palladium
Palladium may be sputter deposited in the sputter-system (Lesker). See process results here:
Equipment comparison
In the chart below you can compare the different deposition equipment:
E-beam evaporation (Temescal) | E-beam evaporation (Wordentec) | Sputter deposition (Sputter-System (Lesker)) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
---|---|---|---|---|
General description | E-beam deposition of Pd | E-beam deposition of Pd | Sputter deposition of Pd | Sputter deposition of Pd |
Pre-clean | Ar ion source | none | RF Ar clean | RF Ar clean |
Layer thickness | 10 Å - 600 nm* | 10 Å - 600 nm* | 10 Å - 600 nm* | 10 Å - ? discuss with staff |
Deposition rate | 0.5 Å/s to 10Å/s | 2 Å/s to 10Å/s | Up to 4.3 Å/s | Not yet known - discuss with staff |
Batch size |
|
|
|
|
Allowed materials |
|
|
|
Almost any that do not degas |
Comment |
* If depositing more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.