Specific Process Knowledge/Thin film deposition/MVD: Difference between revisions

From LabAdviser
← Older edit
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,298 edits
No edit summary
 
(73 intermediate revisions by 5 users not shown)
Line 1: Line 1:
=The Molecular Vapor Deposition Tool =
{{cc-nanolab}}


[[image:Mvd.jpg|200x200px|right|thumb|The MVD is located in cleanroom 1]]
'''Feedback to this page''': '''[mailto:photolith@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/MVD click here]'''


The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is essential for nanoimprint lithography.
[[Category: Equipment|Thin film MVD]]
[[Category: Thin Film Deposition|MVD]]


== Processing on the MVD ==
== The Molecular Vapor Deposition tool ==


The MVD coatings are created as self-assembled monolayers on a surface when a molecular vapor of chemials is present.
[[image:Mvd.jpg|200x200px|right|thumb|The MVD is located in cleanroom A-1]]


These chemicals, typically it is flourinated organosilanes, have a teflon-like tail consisting of -(CF<sub>2</sub>)<sub>x</sub>CF<sub>3</sub> and, in the other end, a reactive group -Si<sub>(teflon)</sub>Cl<sub>x</sub>. As shown in the figure below, the chlorine atoms react with -OH groups of the surface to form a chemical bond -Si(<sub>(teflon)</sub>)-O-Si<sub>(surface)</sub>- under elimination of HCL. This means that both Si and SiO<sub>2</sub> surfaces are coated because of the native oxide on Si surfaces.  
The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At DTU Nanolab the MVD is an essential tool for nanoimprint lithography, where it is used to create antistiction coatings on the imprint stamps.


<gallery caption="Some chemicals of the MVD and the surface reaction" widths="200px" heights="150px" perrow="2">
image:chlorosilanes.jpg|Different chemicals for the MVD.
image:MVDsurfacereaction.jpg|The chemical reaction in which the Cl atoms of the precursors are eliminated under formation of HCl.
</gallery>


== The parameters of the MVD process ==
'''The user manual, user APV, and contact information can be found in LabManager:'''


The most important parameters to control during the MVD process are:
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=199 MVD in LabManager]


; Substrate surface
==Process information==
: A O<sub>2</sub> plasma is run prior to any process in order to
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating|Processing on the MVD]]
condition the substrate surface. This will also remove any existing MVD coating.
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating#The FLAT recipe|The FLAT recipe]]
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating#The STAMP recipe|The STAMP recipe]]


; Water content
: Water will cause the chemicals to polymerize (bond to each other instead of on the surface) and it is therefore critical to precisely  control the water content.


{| border="2" cellpadding="2" cellspacing="1"  
== Equipment performance and process related parameters ==
|+ The flat recipe
 
{| border="2" cellspacing="0" cellpadding="2"  
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*FDTS coating of Si or SiO2 surfaces
*Indirect O2 plasma treatment
|-
|-
! rowspan="3" align="center"| O<sub>2</sub> plasma
!style="background:silver; color:black;" align="center" width="60"|Vapor sources
! Flow
|style="background:LightGrey; color:black"|Line
| 200 sccm
*1
*2
*3
*4
|style="background:WhiteSmoke; color:black"|Chemical
*Water
*FDTS (new source, 2013)
*FDTS (old source, contaminated line)
*Available (line probably contaminated, no source heater)
|-
|-
! Power
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
| 250 Watts
|style="background:LightGrey; color:black"|Contact angle
|style="background:WhiteSmoke; color:black" align="center"|
110° (water)
|-
|-
! Time
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
| 300 seconds
|style="background:LightGrey; color:black"|Base pressure
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
20 mTorr
|-
|-
! rowspan="4" align="center"| Chemical # 1 (vapor order 1)
|style="background:LightGrey; color:black"|Chamber temperature
! Name
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
| FDTS
35°C
|-
|-
! Line no.
|style="background:LightGrey; color:black"|Chamber volume
| 3
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Approx. 3 liters
|-
|-
! Cycles
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
| 4
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1" to 8"
 
Smaller samples may be processed if fixed to a carrier
|-
|-
! Pressure
| style="background:LightGrey; color:black"|Allowed materials
| 0.500 Torr
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|-
All cleanroom materials except steel and other ferrous materials
! rowspan="4" align="center"| Chemical # 2 (vapor order 2)
! Name
| Water
|-
! Line no.
| 1
|-
! Cycles
| 1
|-
! Pressure
| 18 Torr
|-
! Processing
! Time
| 900 seconds
|-
! Purge
! Cycles
| 5
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
One sample at a time
Two 4" or 6" wafers may be processed simultaneously using cassettes
|-
|}
|}
<br clear="all" />

Latest revision as of 13:52, 10 May 2023

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

Feedback to this page: click here

The Molecular Vapor Deposition tool

The MVD is located in cleanroom A-1

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At DTU Nanolab the MVD is an essential tool for nanoimprint lithography, where it is used to create antistiction coatings on the imprint stamps.


The user manual, user APV, and contact information can be found in LabManager:

MVD in LabManager

Process information


Equipment performance and process related parameters

Purpose
  • FDTS coating of Si or SiO2 surfaces
  • Indirect O2 plasma treatment
Vapor sources Line
  • 1
  • 2
  • 3
  • 4
 Chemical
  • Water
  • FDTS (new source, 2013)
  • FDTS (old source, contaminated line)
  • Available (line probably contaminated, no source heater)
Performance Contact angle

110° (water)

Process parameters Base pressure

20 mTorr

Chamber temperature

35°C

Chamber volume

Approx. 3 liters

Substrates Substrate size

1" to 8"

Smaller samples may be processed if fixed to a carrier

Allowed materials

All cleanroom materials except steel and other ferrous materials

Batch

One sample at a time

Two 4" or 6" wafers may be processed simultaneously using cassettes


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/MVD&oldid=46193"