Specific Process Knowledge/Thin film deposition/MVD: Difference between revisions

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=The Molecular Vapor Deposition Tool =
{{cc-nanolab}}


[[image:Mvd.jpg|200x200px|right|thumb|The MVD is located in cleanroom 1]]
'''Feedback to this page''': '''[mailto:photolith@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/MVD click here]'''


The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. They are created as self-assembled monolayers on a surface when a molecular vapor of chemials is present. In most cases the chlorine atoms in the end of an flourinated organosilane react with -OH groups of the surface to form a chemical bond under elimination of HCL.
[[Category: Equipment|Thin film MVD]]
[[Category: Thin Film Deposition|MVD]]


<gallery caption="Some chemicals of the MVD and the surface reaction" heights="300px" perrow="2">
== The Molecular Vapor Deposition tool ==
image:chlorosilanes.jpg|Different chemicals for the MVD.
image:MVDsurfacereaction.jpg|The chemical reaction in which the Cl atoms of the precursors are eliminated under formation of HCl.
</gallery>


{| border="2" cellpadding="2" cellspacing="1"  
[[image:Mvd.jpg|200x200px|right|thumb|The MVD is located in cleanroom A-1]]
|+ The flat recipe
 
The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At DTU Nanolab the MVD is an essential tool for nanoimprint lithography, where it is used to create antistiction coatings on the imprint stamps.
 
 
'''The user manual, user APV, and contact information can be found in LabManager:'''
 
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=199 MVD in LabManager]
 
==Process information==
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating|Processing on the MVD]]
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating#The FLAT recipe|The FLAT recipe]]
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating#The STAMP recipe|The STAMP recipe]]
 
 
== Equipment performance and process related parameters ==
 
{| border="2" cellspacing="0" cellpadding="2"  
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*FDTS coating of Si or SiO2 surfaces
*Indirect O2 plasma treatment
|-
|-
! rowspan="3" align="center"| O<sub>2</sub> plasma
!style="background:silver; color:black;" align="center" width="60"|Vapor sources
! Flow
|style="background:LightGrey; color:black"|Line
| 200 sccm
*1
*2
*3
*4
|style="background:WhiteSmoke; color:black"|Chemical
*Water
*FDTS (new source, 2013)
*FDTS (old source, contaminated line)
*Available (line probably contaminated, no source heater)
|-
|-
! Power
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
| 250 Watts
|style="background:LightGrey; color:black"|Contact angle
|style="background:WhiteSmoke; color:black" align="center"|
110° (water)
|-
|-
! Time
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
| 300 seconds
|style="background:LightGrey; color:black"|Base pressure
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
20 mTorr
|-
|-
! rowspan="4" align="center"| Chemical # 1 (vapor order 1)
|style="background:LightGrey; color:black"|Chamber temperature
! Name
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
| FDTS
35°C
|-
|-
! Line no.
|style="background:LightGrey; color:black"|Chamber volume
| 3
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Approx. 3 liters
|-
|-
! Cycles
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
| 4
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1" to 8"
 
Smaller samples may be processed if fixed to a carrier
|-
|-
! Pressure
| style="background:LightGrey; color:black"|Allowed materials
| 0.500 Torr
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|-
All cleanroom materials except steel and other ferrous materials
! rowspan="4" align="center"| Chemical # 2 (vapor order 2)
! Name
| Water
|-
! Line no.
| 1
|-
! Cycles
| 1
|-
! Pressure
| 18 Torr
|-
! Processing
! Time
| 900 seconds
|-
! Purge
! Cycles
| 5
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
One sample at a time
Two 4" or 6" wafers may be processed simultaneously using cassettes
|-
|}
|}
<br clear="all" />

Latest revision as of 13:52, 10 May 2023

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

Feedback to this page: click here

The Molecular Vapor Deposition tool

The MVD is located in cleanroom A-1

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At DTU Nanolab the MVD is an essential tool for nanoimprint lithography, where it is used to create antistiction coatings on the imprint stamps.


The user manual, user APV, and contact information can be found in LabManager:

MVD in LabManager

Process information


Equipment performance and process related parameters

Purpose
  • FDTS coating of Si or SiO2 surfaces
  • Indirect O2 plasma treatment
Vapor sources Line
  • 1
  • 2
  • 3
  • 4
 Chemical
  • Water
  • FDTS (new source, 2013)
  • FDTS (old source, contaminated line)
  • Available (line probably contaminated, no source heater)
Performance Contact angle

110° (water)

Process parameters Base pressure

20 mTorr

Chamber temperature

35°C

Chamber volume

Approx. 3 liters

Substrates Substrate size

1" to 8"

Smaller samples may be processed if fixed to a carrier

Allowed materials

All cleanroom materials except steel and other ferrous materials

Batch

One sample at a time

Two 4" or 6" wafers may be processed simultaneously using cassettes


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