Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/original: Difference between revisions

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<!--Checked for updates on 11/2-2019 - ok/jmli -->
<!--Page reviewed by jmli 9/8-2022 -->
<!--Page reviewed by jmli 28/4-2023  -->
{{Author-jmli1}}
 
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
|+ '''Process runs'''
|+ '''Process runs'''
Line 23: Line 27:
| Pegasus/jmli
| Pegasus/jmli
| 10 minute TDESC clean
| 10 minute TDESC clean
| danchip/jml/showerhead/prD, 110 cycles or 8:04 minutes  
| nanolab/jml/showerhead/prD, 110 cycles or 8:04 minutes  
| S004584
| S004584
! Old showerhead  
! Old showerhead  
Line 37: Line 41:
| Pegasus/jmli
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| 10 minute TDESC clean + 45 sec barc etch
| danchip/jml/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes  
| nanolab/jml/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes  
| S004675
| S004675
! New showerhead  
! New showerhead  

Latest revision as of 11:27, 28 April 2023

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
20/11-2014 4" Wafer with AZ resist Travka50 pattern Si / 50+ % Pegasus/jmli 10 minute TDESC clean nanolab/jml/showerhead/prD, 110 cycles or 8:04 minutes S004584 Old showerhead

1/12-2014 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon crystalbonded on carrier standard stepper mask (50 nm barc + 320 nm krf) Si / 50+ % Pegasus/jmli 10 minute TDESC clean + 45 sec barc etch nanolab/jml/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes S004675 New showerhead
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