Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions
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== Molybdenum deposition == | == Molybdenum deposition == | ||
Molybdenum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment. | Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment. | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| E-beam deposition of Mo | | E-beam deposition of Mo | ||
| Sputter deposition of Mo | (line-of-sight deposition) | ||
| Sputter deposition of Mo | |||
(not line-of-sight) | |||
| Sputter deposition of Mo | |||
(not line-of-sight) | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
| | |Ar ion source | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
| Line 27: | Line 30: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to 0. | |10Å to 0.2 µm* | ||
|10Å to 500 Å | |10Å to 500 Å | ||
|10Å to ? ''discuss with staff'' | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
| | |1Å/s to 10Å/s | ||
| Depends on process parameters, roughly about 1 Å/s | | Depends on process parameters, roughly about 1 Å/s | ||
| Not known yet, probably similar to 'old' Lesker sputter system | |||
|- | |- | ||
|- | |- | ||
| Line 41: | Line 44: | ||
! Batch size | ! Batch size | ||
| | | | ||
*Up to | *Up to 4x6" wafers | ||
* | *Up to 3x8" wafers (ask for holder) | ||
*Many smaller pieces | |||
* | |||
| | | | ||
* Pieces or | * Pieces or | ||
* 1x4" wafer or | * 1x4" wafer or | ||
* 1x6" wafer | * 1x6" wafer | ||
| | |||
*Up to 10x4" or 6" wafers | |||
*Many smaller pieces | |||
|- | |- | ||
| Line 58: | Line 61: | ||
| | | | ||
* Silicon | * Silicon | ||
* Silicon oxide | *Silicon oxide | ||
* Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* Photoresist | *Photoresist | ||
* PMMA | *PMMA | ||
* Mylar | *Mylar | ||
* | *Metals | ||
* | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
| | | | ||
* Silicon | * Silicon | ||
| Line 75: | Line 78: | ||
* SU-8 | * SU-8 | ||
| | | | ||
Almost any as long as it does not outgas. | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| | | As of June 2023, Mo has not yet been deposited in the Temescal. | ||
| | Please contact the Thin Film group to develop a process. | ||
| Sputter target size 2". | |||
| Sputter target size 3-4" (usually 3"). As of June 2023, Mo has not yet been deposited in the 'new' Lesker sputter chambers. | |||
Please contact the Thin Film group to develop a process. | |||
|- | |- | ||
| Line 93: | Line 92: | ||
'''*''' '' | '''*''' ''Depending on the amount of heating during Mo deposition, which we will discover during process development.'' | ||
Latest revision as of 10:48, 9 June 2023
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Unless otherwise stated, this page is written by DTU Nanolab internal
Molybdenum deposition
Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Temescal) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|
| General description | E-beam deposition of Mo
(line-of-sight deposition) |
Sputter deposition of Mo
(not line-of-sight) |
Sputter deposition of Mo
(not line-of-sight) |
| Pre-clean | Ar ion source | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 0.2 µm* | 10Å to 500 Å | 10Å to ? discuss with staff |
| Deposition rate | 1Å/s to 10Å/s | Depends on process parameters, roughly about 1 Å/s | Not known yet, probably similar to 'old' Lesker sputter system |
| Batch size |
|
|
|
| Allowed materials |
|
|
Almost any as long as it does not outgas. |
| Comment | As of June 2023, Mo has not yet been deposited in the Temescal.
Please contact the Thin Film group to develop a process. |
Sputter target size 2". | Sputter target size 3-4" (usually 3"). As of June 2023, Mo has not yet been deposited in the 'new' Lesker sputter chambers.
Please contact the Thin Film group to develop a process. |
* Depending on the amount of heating during Mo deposition, which we will discover during process development.