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{{cc-nanolab}}
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing click here]'''
[[Category: Equipment|Lithography]]
[[Category: Lithography]]
__TOC__
=General Process Information=
=General Process Information=
Processing on Developer TMAH UV-lithography consists of the following steps:  
Processing on Developer TMAH UV-lithography consists of the following steps:  
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*Puddle development
*Puddle development
*Rinse
*Rinse


'''Features of Developer TMAH UV-lithography:'''
'''Features of Developer TMAH UV-lithography:'''
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=Process recommendations=
=Process recommendations=
==This section is under construction [[Image:section under construction.jpg|70px]]==


Recommended parameters for development of different resists.
Recommended parameters for development of different resists.  
Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|Information on UV exposure dose]]


*'''AZ nLOF 2020'''
'''2µm AZ nLOF 2020:'''
Exposure dose: 16s @ 7 mW/cm2 (2 µm)
*PEB: 60s @ 110°C
*Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°)


PEB: 60s @ 110°C


Development: SP 30s. For lift-off SP 60s (sidewall angle ~15°)
'''1.5µm AZ MiR 701:'''
*'''AZ MiR 701'''
*PEB: 60s @ 110°C
Exposure dose: ?
*Development: SP 60s


PEB: 60s @ 110°C


Development: SP 60s
'''1.5µm AZ 5214E:''' (positive process)
*'''AZ 5214E''' (positive process)
*No PEB
Exposure dose: 8.5s @ 7 mW/cm2 (1.5 µm)
*Development: SP 60s


No PEB


Development: SP 60s
'''2.2µm AZ 5214E:''' (image reversal)
*'''AZ 4562'''
*Reversal bake: 60s-120s @ 110°C
Exposure dose: ~60s @ 7 mW/cm2 (10 µm)
*Flood exposure: ~500 mJ/cm<sup>2</sup>
*Development: SP 60s


No PEB


Development: MP 4x60s ?
'''6.2µm AZ 4562:'''
*No PEB
*Development: MP 3x60s
 
 
'''10µm AZ 4562:'''
*No PEB
*Development: MP 4x60s or MP 5x60s


=Standard Processes=
=Standard Processes=
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Single puddle:
Single puddle:
*'''DCH 100mm SP 30s'''
*'''(1001) DCH 100mm SP 30s'''
*'''DCH 100mm SP 60s'''
*'''(1002) DCH 100mm SP 60s'''
*'''DCH 100mm SP 90s'''
*'''(1004) DCH 100mm SP 90s'''
*'''DCH 100mm SP 120s'''
*'''(1003) DCH 100mm SP 120s'''
*'''DCH 150mm SP 60s'''
*'''(1005) DCH 150mm SP 60s'''
 


Multiple puddle:
Multiple puddle:
*'''DCH 100mm MP 3x60s'''
*'''(1019) DCH 100mm MP 3x60s'''
*'''DCH 100mm MP 3x60s'''
*'''(1010) DCH 100mm MP 4x60s'''
*'''DCH 100mm MP 3x60s'''
*'''(1012) DCH 100mm MP 5x60s'''
*'''(1018) DCH 100mm MP 7x60s'''
*'''(1017) DCH 100mm MP 10x60s'''
*'''(1006) DCH 150mm MP 3x60s'''
 


Each of these sequences start with a 2s pre-wet at 1200 rpm using developer. The puddle dispense is done at a rotation of 30rpm. The dispense time is 3s, and 7s, corresponding to a volume of 11 ml, and 26 ml, for 100mm, and 150mm, respectively. The development (puddle time) is split in two by an agitation step of 2s at 30rpm (one rotation). Spin-off is 3s at 4000rpm. Finally, the wafer is rinsed as described above. The multiple puddle sequences repeat the dispense, development, and spin off steps a number of times before the rinse.
Each of these sequences start with a 2s pre-wet at 1200 rpm using developer. The puddle dispense is done at a rotation of 30rpm. The dispense time is 3s, and 7s, corresponding to a volume of 11 ml, and 26 ml, for 100mm, and 150mm, respectively. The development (puddle time) is split in two by an agitation step of 2s at 30rpm (one rotation). Spin-off is 3s at 4000rpm. Finally, the wafer is rinsed as described above. The multiple puddle sequences repeat the dispense, development, and spin off steps a number of times before the rinse.


*'''DCH 100mm SP 60s no spinoff'''
 
'''DCH 100mm SP 60s no spinoff'''<br>
As DCH 100mm SP 60s except the spin-off step is omitted. The development is thus terminated by the rinse (30s @ 4000rpm). This may help in case of scumming problems.
As DCH 100mm SP 60s except the spin-off step is omitted. The development is thus terminated by the rinse (30s @ 4000rpm). This may help in case of scumming problems.


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''Sequence names and process parameters (Sequence no. 2000-2999):''
''Sequence names and process parameters (Sequence no. 2000-2999):''
*'''DCH PEB 110C 60s'''
*'''(2001) DCH PEB 110C 60s'''
*'''DCH PEB 110C 120s'''
*'''(2002) DCH PEB 110C 120s'''
Process parameters: Bake at 110°C. 20s cool at 20°C.
 
 
'''Process parameters:'''
*Bake at 110°C
*20s cool at 20°C.


==Combined PEB and development==
==Combined PEB and development==
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''Sequence names and process parameters (Sequence no. 3000-3999):''
''Sequence names and process parameters (Sequence no. 3000-3999):''
*'''DCH 100mm PEB60s@110C+SP60s'''
 
'''(3001) DCH 100mm PEB60s@110C+SP60s'''<br>
A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 60s' development.
A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 60s' development.
*'''DCH 100mm PEB60s@110C+SP30s'''
 
 
'''(3005) DCH 100mm PEB60s@110C+SP30s'''<br>
A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 30s' development.
A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 30s' development.
'''(3010) DCH 150mm PEB60s@110C+SP60s'''<br>
A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 150mm SP 60s' development.
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