Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1: Difference between revisions
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<!--Checked for updates on 11/2-2019 - ok/jmli --> | |||
<!--Checked for updates on 15/10-2021 - ok/jmli --> | |||
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | ||
|+ '''Process runs''' | |+ '''Process runs''' | ||
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| ICP Metal Etch / jmli | | ICP Metal Etch / jmli | ||
| 2*30 sec barc etch using 'slow etch with carrier' | | 2*30 sec barc etch using 'slow etch with carrier' | ||
| isoslow1 , 2:00 minutes | | danchip/jmlli/Si/isotropice/isoslow1 , 2:00 minutes | ||
| S005292 | | S005292 | ||
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Latest revision as of 13:12, 15 October 2021
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 9/9-2014 | 6" First DUV box wafer | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50%+ | ICP Metal Etch / jmli | 2*30 sec barc etch using 'slow etch with carrier' | danchip/jmlli/Si/isotropice/isoslow1 , 2:00 minutes | S005292 |
| |
