Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions

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= Isotropic etching in silicon on the ICP Metal Etch =
= Isotropic etching in silicon on the ICP Metal Etch =
 
<!--Checked for updates on 11/2-2019 - ok/jmli -->
 
<!--Checked for updates on 24/8-2021. ok/ jmli-->


{| border="1" cellpadding="0" cellspacing="0" style="text-align:center;"
{| border="1" cellpadding="0" cellspacing="0" style="text-align:center;"
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! rowspan="2" width="20"| Time
! rowspan="2" width="20"| Time
! rowspan="2" width="20"| Pres.
! rowspan="2" width="20"| Pres.
! rowspan="2" width="20"| [[Main Page/Process Logs/jmli/Parameters#Hardware | Hardware]]  
! rowspan="2" width="20"| [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters#Hardware | Hardware]]
! colspan="10" | Gasses
! colspan="10" | Gasses
! colspan="2" | RF powers
! colspan="2" | RF powers
Line 28: Line 28:
! width="40" | Coil  
! width="40" | Coil  
! width="40" | Platen
! width="40" | Platen
! width="40" | Runs
! width="80" | SEM images of different runs
! width="40" | Keywords
! width="40" | Keywords
|-
|-
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| 20            <!--Temperature  -->
| 20            <!--Temperature  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| 90 ?          <!--Pressure  -->
| 10            <!--Pressure  -->
|       <!--Process chamber setup  -->
| -      <!--Process chamber setup  -->
| 50 ?            <!--SF6 flow  -->
| 90            <!--SF6 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--C4F8 flow  -->
| 0            <!--C4F8 flow  -->
Line 49: Line 49:
| 400            <!--Coil power  -->
| 400            <!--Coil power  -->
| 3          <!--Platen power  -->
| 3          <!--Platen power  -->
| [[Main Page/Process Logs/jmli/IcpMetal/Si/isotropic/isoslow1 | 1]]       <!-- link processes -->
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1|'''Click HERE!''' ]]     <!-- link processes -->
| NA           <!--Keywords  -->
| Note: Lior Shiv got very high etch rate for this recipe >1.5µm/min 2019-07-12           <!--Keywords  -->
|-
|-
| '''r'''  || A || 20 || - || 28 || LF+B100 || 30 || 37 || 0 || 0 || 0 || 0 || 0  || 0 || 0 || 0  || 0 || 100
|| [[Main Page/Process Logs/jmli/IcpMetal/BS/rdabs2 | 1]]  || NA 
|-
|-
! no name, tested by Lior Shiv@Capres 2019-07-12    <!--Recipe Name  -->
| A          <!--Step  -->
| 20            <!--Temperature  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| 10            <!--Pressure  -->
| -      <!--Process chamber setup  -->
| 90            <!--SF6 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--C4F8 flow  -->
| 0            <!--Ar flow  -->
| 0            <!--CF4 flow  -->
| 0            <!--H2 flow  -->
| 0            <!--CH4 flow  -->
| 0            <!--BCl3 flow  -->
| 0            <!--Cl2 flow  -->
| 0            <!--HBr flow  -->
| 150          <!--Coil power  -->
| 3          <!--Platen power  -->
|      <!-- link processes -->
| About 10% load, etch rate around 400nm/min          <!--Keywords  -->
|-
|}
|}

Latest revision as of 15:20, 24 August 2021

Isotropic etching in silicon on the ICP Metal Etch

Process parameters
Recipe Step Temp. Time Pres. Hardware Gasses RF powers Observations
SF6 O2 C4F8 Ar CF4 H2 CH4 BCl3 Cl2 HBr Coil Platen SEM images of different runs Keywords
isoslow1 A 20 - 10 - 90 0 0 0 0 0 0 0 0 0 400 3 Click HERE! Note: Lior Shiv got very high etch rate for this recipe >1.5µm/min 2019-07-12
no name, tested by Lior Shiv@Capres 2019-07-12 A 20 - 10 - 90 0 0 0 0 0 0 0 0 0 150 3 About 10% load, etch rate around 400nm/min
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