Specific Process Knowledge/Etch/DRIE-Pegasus/processA/PrA-0: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA/PrA-0 click here]''' | |||
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! colspan="2" width="120"| Substrate Information | ! colspan="2" width="120"| Substrate Information | ||
! colspan="3" | Process Information | ! colspan="3" | Process Information | ||
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Latest revision as of 11:32, 28 June 2023
Feedback to this page: click here
Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
| Date | Substrate Information | Process Information | SEM Images | |||
|---|---|---|---|---|---|---|
| Wafer info | Exposed area | Conditioning | Recipe | Wafer ID | ||
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-0, 80 cycles or 14:40 minutes | C03991.01 |
|
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-0, 80 cycles or 14:40 minutes | C03991.04 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-0, 80 cycles or 14:40 minutes | C04047.01 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-0, 80 cycles or 14:40 minutes | C04047.04 |
|
