Specific Process Knowledge/Etch/DRIE-Pegasus/processA/PrA-0: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA/PrA-0 click here]'''


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! colspan="2" width="120"| Substrate Information
! colspan="2" width="120"| Substrate Information
! colspan="3" | Process Information
! colspan="3" | Process Information
! rowspan="2" width="500" |SEM Images
! rowspan="2" |SEM Images
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|-
| 3/6-2016
| 4" Travka20 Wafer
| 20 % Si
| 3 minute TDESC clean
| PrA-0, 80 cycles or 14:40 minutes
| C04047.04
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Latest revision as of 11:32, 28 June 2023

Feedback to this page: click here


Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Exposed area Conditioning Recipe Wafer ID
2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C03991.01

2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C03991.04

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C04047.01

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C04047.04

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