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Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch/polySOI10: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
<!--Checked for updates on 28/6-2023 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
{{contentbydryetch}}
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
|+ '''Process runs'''
|+ '''Process runs'''
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! width="40" | Comments
! width="40" | Comments
|-
|-
! colspan="10" | [[Main Page/Process Logs/jmli/Pegasus/SOI/polySOI10 | Previous runs of this recipe]]
| 6/5-2013
| 1/4 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50%+
| Pegasus / jmli
| 3min TDESC clean + 30 sec barc etch
| polySOI5 , 50 cycles or 6:15 minutes
| S003472
|
|
[[File:S003472-1.jpg|120px|frameless ]]
[[File:S003472-2.jpg|120px|frameless ]]
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|-
| 16/7-2013
| 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier 
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50%+
| Pegasus/jmli
| 3 minute TDESC clean + 30 second barc etch
| jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes
| S003614
| lsh: c4f8 etch -> 20
|
[[file:Peg-S003614_06.jpg |120px|frameless ]]
[[file:Peg-S003614_07.jpg |120px|frameless ]]
[[file:Peg-S003614_08.jpg |120px|frameless ]]
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[[file:Peg-S003614_10.jpg |120px|frameless ]]
[[file:Peg-S003614_11.jpg |120px|frameless ]]
|-
| 23/8-2013
| 1/4 6" tigre 400 nm pitch pattern CB on oxide carrier 
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50 % in 20*20 mm squares
| Pegasus / jmli
| 10 minute TDESC clean + 30 second barc etch
| jml/SOI3/polySOI-10: 100 cycles or 12:30 minutes
| S003695
|
|
[[file:S03695-01.jpg |120px|frameless ]]
[[file:S03695-02.jpg |120px|frameless ]]
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|-
| 15/5-2014
| 6" DUV Lithography test pattern
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50 % in 20*20 mm squares
| Pegasus / jmli
| 10 minute TDESC clean + 30 second barc etch
| jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes + 2 mins gentle PR strip
| S004031
|
|
 
[[file:S004031-04.jpg |120px|frameless ]]
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|-
|-
| 28/8-2014
| 28/8-2014
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