Specific Process Knowledge/Characterization/Lifetime scanner MDPmap: Difference between revisions

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-=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
+{{cc-nanolab}}
 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]'''
+<br>
+<br>
+[[image:Lifetimescanner04.jpg|400x400px|right|thumb|Lifetime scanner MPDmap, positioned in cleanroom F-2.]]
-[[image:Lifetimescanner04.jpg|400x400px|right|thumb|Lifetime scanner MPDmap, positioned in cleanroom D-3.]]
 == Microwave Detected Photoconductivity (MDP) ==
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 == Performance information ==
+'''Range of lifetimes''': 20 ns to several ms
+'''The resistivity range for lifetime measurements''' 0.2 to 100 Ohm.cm, p/n
+'''Material''': Silicon, epitaxial layers, partially or fully processed wafers, compound semiconductors and beyond.
+'''Measureable properties''': Carrier lifetime (steady state or non equilibrium (µ -PCD) selectable), photoconductivity (steady state) microwave Photoconductance Decay (µ-PCD)
 ==Equipment performance and process related parameters==
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 |style="background:WhiteSmoke; color:black"|
-*D-3
+*Cx1
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 *405 nm
 **Power 5 mW to 100 mW
-*978 nm
+*977 nm
-**Power 5 mW to 140 mW
+**Power 5 mW to 190 mW
 *975 nm
 **Power 0.5 W to 4.0 W
+*977 nm
+**Power up to 200 µW
 *Spot diameter for all laser 0.5 µm
 |-