Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/SiO2 click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/SiO2 click here]''' <br> | ||
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!Parameter | !Parameter | ||
! | !Parameter settings | ||
|- | |- | ||
|Coil Power [W] | |Coil Power [W] | ||
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|- | |- | ||
|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
| | |20 | ||
|- | |- | ||
|CF<sub>4</sub> flow [sccm] | |CF<sub>4</sub> flow [sccm] | ||
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|-style="background:Black; color:White" | |-style="background:Black; color:White" | ||
!Results | !Results | ||
!Test by Artem Shikin @ Fotonik | !SiO2 Etch Slow ''Test by Artem Shikin @ Fotonik'' | ||
|- | |- | ||
|Etch rate of PECVD BPSG | |Etch rate of PECVD BPSG | ||
|'''39.4nm/min (22-01-2016)''' | |'''39.4nm/min (22-01-2016)''' | ||
|- | |||
|Etch rate in thermal oxide | |||
| | |||
'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape <br> | |||
'''40-50 nm/min''' bghe (2019-2021 5 tests) | |||
|- | |- | ||
|Selectivity to resist [:1] | |Selectivity to resist [:1] | ||
|Not known | |Not known | ||
|- | |||
|Etch rate in silicon | |||
| | |||
bghe@Nanolab 20190117 | |||
*35 nm/min (middle of the wafers with 80% load) | |||
*36 nm/min (edge of the wafers with 80% load) | |||
|- | |- | ||
|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||
| | |+-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests) | ||
|- | |- | ||
|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
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|Comment | |Comment | ||
| | |Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s | ||
|- | |- | ||
|} | |} | ||
Latest revision as of 11:19, 24 March 2023
Feedback to this page: click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated
| Parameter | Parameter settings |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | SiO2 Etch Slow Test by Artem Shikin @ Fotonik |
|---|---|
| Etch rate of PECVD BPSG | 39.4nm/min (22-01-2016) |
| Etch rate in thermal oxide |
48nm/min (bghe 17-01-2017)- whole 4" wafer with capton tape |
| Selectivity to resist [:1] | Not known |
| Etch rate in silicon |
bghe@Nanolab 20190117
|
| Wafer uniformity (100mm) | |
| Profile [o] | Not known |
| Wafer uniformity map (click on the image to view a larger image) | Not known |
| SEM profile images | NONE |
| Comment | Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s |