Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes: Difference between revisions
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== Overview of the standard processes: Processes A, B, C, D and SOI == | == Overview of the standard processes: Processes A, B, C, D and SOI == | ||
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The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process | The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process | ||
Latest revision as of 15:39, 2 February 2023
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Overview of the standard processes: Processes A, B, C, D and SOI
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
| Process name | Type | Purpose | Conditions during original runs | Best usage | |||
|---|---|---|---|---|---|---|---|
| Feature | Mask material | Etch load | Comments | ||||
| Process A | Bosch | Fast etch | 80 µm trench | Photo resist | 12-13 % on 6" wafer | ||
| Process B | Bosch | Fast etch | 30 µm diameter via | Photo resist | 12-13 % on 6" wafer | ||
| Process C | Continuous | Very slow etch | 50 nm posts | Aluminum | 99.9 % on 4" wafer | ||
| Process D | Bosch | Smooth sidewall etch | 10 µm trench | Photo resist | 50 % on 6" wafer | ||