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Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions

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<!--Page reviewed by jmli 9/8-2022  -->
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==Etching of TOPAS==
==Etching of TOPAS==
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''TOPAS''' by khara@danchip
|+ '''TOPAS''' by khara@nanolab
|-
|-
! Parameter
! Parameter
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| 99
| 99
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|-
! CO<sub>2</sub> (sccm)
! CO<sub>2</sub> (sccm) (not available anymore)
| 50
| 50
| 0
| 0
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==Under etching and local masking==
==Under etching and local masking==
When etching TOPAS I have in general used a hard mask material underneath my layer of photo resist, to ensure that if the resist was completely removed, a mask was still present. It is however always recomended to have a photo resist as mask, as a hard mask material will introduce roughness in unmask areas of the polymer.
When etching TOPAS I have in general used a hard mask material underneath my layer of photoresist, to ensure that if the resist was completely removed, a mask was still present. It is however always recommended to have a photoresist as mask, as a hard mask material will introduce roughness in unmask areas of the polymer.




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|[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]]
|[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]]
|-
|-
|style="width:200px;" |Etch broke through the photo resist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects.
|style="width:200px;" |Etch broke through the photoresist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects.
|style="width:200px;" |The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch.
|style="width:200px;" |The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch.
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|-
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