Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions

@@ Line 1: / Line 1: @@
+{{cc-nanolab}}
 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon/Boron_doped_poly-Si_and_a-Si click here]'''
 ==Boron-doped amorphous silicon by using 4" LPCVD polysilicon furnace (B4) ==
-''Result from Thomas Pedersen, @Nanotech, Sep 2015''
+''Result from Thomas Pedersen, DTU Nanotech (now DTU Nanolab), September 2015''
 ====Process parameters====
@@ Line 37: / Line 40: @@
 ====Process parameters====
+The test was made on a n-type silicon wafer (100) with a 110 nm grown thermal oxide)
 '''Pressure:'''  250 mtorr
@@ Line 52: / Line 56: @@
 '''Test wafer position:''' Center of the boat
-A better uniformity was achieved by annealing in N<sub>2</sub>. Measured film thickness was 370 nm and the sheet resistance was measured to 200 &Omega;/sq +/- 15 &Omega;/sq.
+A better uniformity of the resistivity across the wafer was achieved by subsequently annealing in N<sub>2</sub>, the annealing was done in Anneal Oxide Furnace (C1). The measured film thickness was 370 nm and the sheet resistance was measured to 200 &Omega;/sq +/- 15 &Omega;/sq.