Specific Process Knowledge/Characterization/XPS/Processing/Basics/2highres: Difference between revisions
Appearance
No edit summary |
|||
| (11 intermediate revisions by the same user not shown) | |||
| Line 1: | Line 1: | ||
<!--Checked for updates on 30/7-2018 - ok/jmli --> | |||
<!--Checked for updates on 24/8-2021. ok/ jmli--> | |||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/XPS/Processing/Basics/2highres click here]''' | |||
<!--Checked for updates on 9/5-2023 - ok/jmli --> | |||
{{Contentbydryetch}} | |||
<!--Checked for updates on 4/9-2025 - ok/jmli --> | |||
== Selecting high resolution spectra for peak fitting == | == Selecting high resolution spectra for peak fitting == | ||
The analysis of the data from [[Specific Process Knowledge/Characterization/XPS/Processing/Basics/1intro#anchor_1introbottom|here]] is continued. | The analysis of the data from [[Specific Process Knowledge/Characterization/XPS/Processing/Basics/1intro#anchor_1introbottom|here]] is continued. | ||
Open a new data grid and drag the four sets of spectra into each quadrant as seen below. | Open a new data grid and drag the four sets of spectra into each quadrant as seen below. From these four sets of spectra a peak table will be made from which the quantification calculated. Each data grid contains a peak table and it is therefore essential that the peak table obtained from the survey spectra does not get mixed with the one from the high resolution spectra. | ||
[[File:XPS-basics10.jpg|700px]] | [[File:XPS-basics10.jpg|700px]] | ||
| Line 9: | Line 16: | ||
Scroll up or down through the etch levels of one spectrum by using the scroll button (either etch level or etch time). If several spectra are selected simultaneously by pressing SHIFT or CTRL while clicking on the spectra in the four quadrant view, you watch the evolution of the spectra together. | Scroll up or down through the etch levels of one spectrum by using the scroll button (either etch level or etch time). If several spectra are selected simultaneously by pressing SHIFT or CTRL while clicking on the spectra in the four quadrant view, you watch the evolution of the spectra together. | ||
To analyze a single spectrum, select and maximize it. | To analyze a single spectrum, select and maximize it. If you are unfamiliar with what to expect in a spectrum of the element in question, open XPS Knowledge View and select the element from the Periodic Table. This will provide very useful information. Also, before adding peaks to the spectrum, it is a good idea consider what you know about the sample. Here, we know that the sample has ALD deposited layers of ZnO and CuZn on top of a silicon substrate. One would therefore expect to see bulk silicon provided we sputter deep enough and oxidized silicon from the native oxide. Therefore, scroll to an etch level where, preferably, both the oxidized Si2p and the bulk silicon Si2p are visible. In this case, it is etch level 35. | ||
<gallery widths="350" heights="250" perrow="3"> | <gallery widths="350" heights="250" perrow="3"> | ||
| Line 102: | Line 109: | ||
To correct the faulty fitting, two new constraints (marked in the table by a blue square) have been applied. The top one fixes the bulk peak binding energy in the range 98 to 100 eV and the bottom one fixes the oxide peak to a 2 eV wide energy range 3.5 eV above the bulk peak. Applying a constraint to a parameter is simple done by writing (using the right notation, of course) in the table - removing is done by deleting. | To correct the faulty fitting, two new constraints (marked in the table by a blue square) have been applied. The top one fixes the bulk peak binding energy in the range 98 to 100 eV and the bottom one fixes the oxide peak to a 2 eV wide energy range 3.5 eV above the bulk peak. Applying a constraint to a parameter is simple done by writing (using the right notation, of course) in the table - removing is done by deleting. | ||
To apply the constraints on all levels (if several levels are available) one has to | To apply the constraints on all etch levels (if several levels are available) one has to | ||
# Click in the upper left corner of the 'Peak Fit' table to select all values and constraints. | # Click in the upper left corner of the 'Peak Fit' table to select all values and constraints. | ||
# Right click inside the table and select 'Propagate Selected Constraints/Values..' as shown below. | # Right click inside the table and select 'Propagate Selected Constraints/Values..' as shown below. | ||
# Select 'All Columns' and 'Constraints and Values' | # Select 'All Columns' and 'Constraints and Values' | ||
[[File:XPS-basics19a1.jpg|500px]] | |||
[[File:XPS-basics19b.jpg|300px]] | |||
Before applying the constraints to the fitting of all the levels, it may be a good idea to rename the peaks. Here, it makes good sense to apply the names 'Bulk' and 'Oxide'. | |||
[[File:Si2p fit1.jpg|500px]] | |||
Then, | |||
# Click the 'Peak Fitting' button, select 'Fit All Levels' in the 'Fit Peaks'. | # Click the 'Peak Fitting' button, select 'Fit All Levels' in the 'Fit Peaks'. | ||
# Click 'Accept' when the fitting routine has completed. | # Click 'Accept' when the fitting routine has completed. | ||
The result is that we have fitted all etch levels of the Si2p peak. Since silicon is not the only element in the sample, we need to apply the same procedures to the other core levels. | |||
The analysis continues <span>[[Specific_Process_Knowledge/Characterization/XPS/Processing/Basics/3fitting#top|'''here''']]</span>. | |||