Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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''All text by Nanolab staff'' | |||
==Deposition of | ==Deposition of Al<sub>2</sub>O<sub>3</sub>== | ||
Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub> ) can be deposited by use of ALD (atomic layer deposition) | Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample. | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | *[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
*[[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] | *[[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] | ||
*[[ | *[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Sputter-System Metal-Oxide(PC1)]] | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2|Evaporation of Al<sub>2</sub>O<sub>3</sub> in E-Beam Evaporator (10-pockets)]] | |||
==Comparison of the methods for deposition of Alumium Oxide== | ==Comparison of the methods for deposition of Alumium Oxide== | ||
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] | ||
![[ | ![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide(PC1)]] | ||
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ||
![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|10-pocket e-beam evaporator]] | |||
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!Generel description | !Generel description | ||
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*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target | |||
*Reactive sputtering | |||
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*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target | |||
*Pulsed DC reactive sputtering | |||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | |||
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*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | *ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | ||
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*E-beam evaporation of Al<sub>2</sub>O<sub>3</sub> pellets or of Al in an O<sub>2</sub> flow | |||
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!Stoichiometry | !Stoichiometry | ||
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*Not tested | |||
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*Not tested | |||
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*Al<sub>2</sub>O<sub>3</sub>, very good | *Al<sub>2</sub>O<sub>3</sub>, very good | ||
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*Not tested yet | |||
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!Film Thickness | !Film Thickness | ||
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*few nm - 200 nm | |||
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*few nm - 200-300 nm | |||
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* 0nm - 100 nm | |||
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* | *few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber) | ||
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!Deposition rate | !Deposition rate | ||
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* 0.3 nm/min | |||
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* About 1.7 nm/min, depends on sputtering parameters | |||
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*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | |||
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* | * 1-2 Å/s | ||
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!Step coverage | !Step coverage | ||
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*unknown | |||
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*unknown | |||
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | ||
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* We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned. | |||
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!Process Temperature | !Process Temperature | ||
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* room temperature | |||
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* Up to 600 °C | |||
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*150 | *150 °C - 350 °C | ||
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* Up to 250 °C | |||
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*See [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|deposition conditions]] | |||
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | *[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
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!Substrate size | !Substrate size | ||
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* chips | |||
* 1x 100 mm wafer | |||
* 1x 150 mm wafer | |||
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* chips | |||
* 10x 100 mm wafer | |||
* 10x 150 mm wafer | |||
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*1-5 100 mm wafers | *1-5 100 mm wafers | ||
*1-5 150 mm wafers | *1-5 150 mm wafers | ||
*Several smaller samples | *Several smaller samples | ||
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* chips | |||
* 1-3 x 100 mm wafers | |||
* 1-3 x 150 mm wafers | |||
* 1-3 x 200 mm wafers | |||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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| | *almost any that does not degas | ||
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*almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]. | |||
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*Silicon | *Silicon | ||
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*III-V materials (use dedicated carrier wafer) | *III-V materials (use dedicated carrier wafer) | ||
*Polymers (depending on the melting point/deposition temperature, use carrier wafer) | *Polymers (depending on the melting point/deposition temperature, use carrier wafer) | ||
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*almost any that does not degas. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet] | |||
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Latest revision as of 15:31, 7 February 2024
Feedback to this page: click here
All text by Nanolab staff
Deposition of Al2O3
Aluminium oxide (Alumina, Al2O3) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.
- Al2O3 deposition using ALD
- Sputter-System(Lesker)
- Sputter-System Metal-Oxide(PC1)
- Evaporation of Al2O3 in E-Beam Evaporator (10-pockets)
Comparison of the methods for deposition of Alumium Oxide
Sputter-System(Lesker) | Sputter-System Metal-Oxide(PC1) | ALD Picosun 200 | 10-pocket e-beam evaporator | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on Al2O3 | ||||
Substrate size |
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Allowed materials |
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