Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions

From LabAdviser
Pevo (talk | contribs)
No edit summary
Eves (talk | contribs)
 
(17 intermediate revisions by 5 users not shown)
Line 1: Line 1:


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Alumina click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Alumina click here]'''


''All text by Nanolab staff''


==Deposition of aluminium oxide==
==Deposition of Al<sub>2</sub>O<sub>3</sub>==
Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub> ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] or the [[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample
Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.


*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub>  deposition using ALD]]
*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub>  deposition using ALD]]
*[[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]]
*[[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
*[[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Sputter-System Metal-Oxide(PC1)]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2|Evaporation of Al<sub>2</sub>O<sub>3</sub> in E-Beam Evaporator (10-pockets)]]


==Comparison of the methods for deposition of Alumium Oxide==
==Comparison of the methods for deposition of Alumium Oxide==
Line 17: Line 19:
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|10-pocket e-beam evaporator]]
|-
|-


Line 26: Line 29:
!Generel description
!Generel description
|
|
*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target
*Reactive sputtering
|
|
*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target
*Pulsed DC reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
|
|
*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
|
*E-beam evaporation of Al<sub>2</sub>O<sub>3</sub> pellets or of Al in an O<sub>2</sub> flow
|-
|-


Line 35: Line 45:
!Stoichiometry
!Stoichiometry
|
|
*Not tested
|
|
*Not tested
|
|
*Al<sub>2</sub>O<sub>3</sub>, very good
*Al<sub>2</sub>O<sub>3</sub>, very good
|
*Not tested yet
|-
|-


Line 44: Line 58:
!Film Thickness
!Film Thickness
|
|
*few nm - 200 nm
|
*few nm - 200-300 nm
|
|
* 0nm - 100 nm
|
|
* 0nm - 100nm
*few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber)
|-
|-


Line 52: Line 70:
!Deposition rate
!Deposition rate
|
|
* 0.3 nm/min
|
* About 1.7 nm/min, depends on sputtering parameters
|
|
*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
|
|
*0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
* 1-2 Å/s
|-
|-


Line 61: Line 83:
!Step coverage
!Step coverage
|
|
*unknown
|
|
*unknown
|
|
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
|
* We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned.
|-
|-


Line 69: Line 95:
!Process Temperature
!Process Temperature
|
|
* room temperature
|
|
* Up to 600 °C
|
|
*150<sup>o</sup>C - 350<sup>o</sup>C:
*150 °C - 350 °C
|
* Up to 250 °C
|-
|-


Line 79: Line 109:
|
|
|
|
*See [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|deposition conditions]]
|
|
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
|
|-
|-


Line 87: Line 120:
!Substrate size
!Substrate size
|
|
* chips
* 1x 100 mm wafer
* 1x 150 mm wafer
|
|
* chips
* 10x 100 mm wafer
* 10x 150 mm wafer
|
|
*1-5 100 mm wafers
*1-5 100 mm wafers
*1-5 150 mm wafers
*1-5 150 mm wafers
*Several smaller samples  
*Several smaller samples  
|
* chips
* 1-3 x 100 mm wafers
* 1-3 x 150 mm wafers
* 1-3 x 200 mm wafers
|-
|-


Line 98: Line 142:
!'''Allowed materials'''
!'''Allowed materials'''
|
|
|  
*almost any that does not degas
|
*almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet].
|
|
*Silicon  
*Silicon  
Line 108: Line 154:
*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|
*almost any that does not degas. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]
|-
|-
|}
|}

Latest revision as of 15:31, 7 February 2024

Feedback to this page: click here

All text by Nanolab staff

Deposition of Al2O3

Aluminium oxide (Alumina, Al2O3) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.

Comparison of the methods for deposition of Alumium Oxide

Sputter-System(Lesker) Sputter-System Metal-Oxide(PC1) ALD Picosun 200 10-pocket e-beam evaporator
Generel description
  • RF sputtering from Al2O3 target
  • Reactive sputtering
  • RF sputtering from Al2O3 target
  • Pulsed DC reactive sputtering
  • Reactive HIPIMS (high-power impulse magnetron sputtering)
  • ALD (atomic layer deposition) of Al2O3
  • E-beam evaporation of Al2O3 pellets or of Al in an O2 flow
Stoichiometry
  • Not tested
  • Not tested
  • Al2O3, very good
  • Not tested yet
Film Thickness
  • few nm - 200 nm
  • few nm - 200-300 nm
  • 0nm - 100 nm
  • few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber)
Deposition rate
  • 0.3 nm/min
  • About 1.7 nm/min, depends on sputtering parameters
  • 0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
  • 1-2 Å/s
Step coverage
  • unknown
  • unknown
  • Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
  • We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned.
Process Temperature
  • room temperature
  • Up to 600 °C
  • 150 °C - 350 °C
  • Up to 250 °C
More info on Al2O3
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • chips
  • 10x 100 mm wafer
  • 10x 150 mm wafer
  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • Several smaller samples
  • chips
  • 1-3 x 100 mm wafers
  • 1-3 x 150 mm wafers
  • 1-3 x 200 mm wafers
Allowed materials
  • almost any that does not degas
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)