|
|
| (11 intermediate revisions by 3 users not shown) |
| Line 1: |
Line 1: |
| '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/SIMS:_Secondary_Ion_Mass_Spectrometry click here]''' | | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/SIMS:_Secondary_Ion_Mass_Spectrometry click here]''' |
| | |
| | '''<p style="color:red;">The Atomika SIMS has been decomissioned and is no longer available.</p>''' |
|
| |
|
| ==Atomika SIMS== | | ==Atomika SIMS== |
|
| |
|
| [[Image:Equipment_SIMS.jpg|300x300px|thumb|Atomika SIMS: positioned in the basement of building 346 (underneath the cleanroom).]]
| | The SIMS analyses the composition of a sample by secondary ion mass spectroscopy. By using either oxygen or cesium ions accelerated by a high tension the surface of the sample is sputtered off as ions. These ions are analysed in a mass spectrometer and one can determine the elemental composition as a function of depth. If compared to signals from reference materials one can quantify the atomic composition - in certain cases down to extremely low concentrations (ppm). Doping levels and impurities may be determined.. |
| | |
| | |
| The Atomika SIMS analyses the composition of a sample by secondary ion mass spectroscopy. By using either oxygen or cesium ions accelerated by a high tension the surface of the sample is sputtered off as ions. These ions are analysed in a mass spectrometer and one can determine the elemental composition as a function of depth. If compared to signals from reference materials one can quantify the atomic composition - in certain cases down to extremely low concentrations (ppm). Doping levels and impurities may be determined. | |
| | |
| Please note that no user will be instructed on the SIMS. Danchip staff will run your samples.
| |
| | |
| '''The user manual and technical information and contact information can be found in LabManager:'''
| |
| | |
| [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=23 The Atomika SIMS in Labmanager]
| |
| | |
| ==An overview of the performance of the SIMS==
| |
| | |
| {| border="2" cellspacing="0" cellpadding="10"
| |
| |-
| |
| !style="background:silver; color:black;" align="left"|Purpose
| |
| |style="background:LightGrey; color:black"| Determination of atomic composition
| |
| |style="background:WhiteSmoke; color:black"|
| |
| * Doping level
| |
| * Sample contamination
| |
| |-
| |
| !style="background:silver; color:black" align="left"|Performance
| |
| |style="background:LightGrey; color:black"|Measurement accuracy depends on
| |
| |style="background:WhiteSmoke; color:black"|
| |
| * Which atoms to be analysed
| |
| * The sample morphology (flat samples are much more suited than particles)
| |
| |-
| |
| !style="background:silver; color:black" align="left" rowspan="3"|Process parameters
| |
| |style="background:LightGrey; color:black"| Ion gun parameters
| |
| |style="background:WhiteSmoke; color:black"|
| |
| * Acceleration voltages and focusing lens parameters
| |
| * Gas inlet pressures and apertures
| |
| |-
| |
| |style="background:LightGrey; color:black"| Mass spectrometer parameters
| |
| |style="background:WhiteSmoke; color:black"|
| |
| * Detector biases and range
| |
| * Scan parameters such as raster size, speeds and pattern
| |
| |-
| |
| |style="background:LightGrey; color:black"| Sample position
| |
| |style="background:WhiteSmoke; color:black"|
| |
| * Angle towards spectrometer
| |
| * For non-conducting samples: Flood gun parameters
| |
| |-
| |
| !style="background:silver; color:black" align="left" rowspan="3" |Sample requirements
| |
| |style="background:LightGrey; color:black"|Substrate material allowed
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *In principle all materials
| |
| |-
| |
| | |
| |style="background:LightGrey; color:black"|Substrate size
| |
| |style="background:WhiteSmoke; color:black"|
| |
| * The samples must be cut into 5x5 or 7x7 mm pieces
| |
| * Other types of samples must be mounted onto appropriately sized carriers
| |
| |-
| |
| |style="background:LightGrey; color:black"|Batch size
| |
| |style="background:WhiteSmoke; color:black"|
| |
| * The sample holder carries up to 6 samples at the time
| |
| |-
| |
|
| |
| |}
| |
| | |
| | |
| | |
| === Typical application of SIMS ===
| |
| | |
| SIMS is the most sensitive technique for elemental composition. It is therefore ideal if you want to check doping profiles or for contaminations.
| |
| | |
| A typical application would be to check the concentration profile of boron doping in silicon. In that case one would put two samples into the SIMS.
| |
| * A reference sample with a known boron profile
| |
| * A sample
| |
Feedback to this page: click here
The Atomika SIMS has been decomissioned and is no longer available.
Atomika SIMS
The SIMS analyses the composition of a sample by secondary ion mass spectroscopy. By using either oxygen or cesium ions accelerated by a high tension the surface of the sample is sputtered off as ions. These ions are analysed in a mass spectrometer and one can determine the elemental composition as a function of depth. If compared to signals from reference materials one can quantify the atomic composition - in certain cases down to extremely low concentrations (ppm). Doping levels and impurities may be determined..
