Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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''This page is written by DTU Nanolab internal'' | |||
==Annealing== | ==Annealing== | ||
At | At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate. | ||
A 20 | A 20-minute N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation. | ||
==Comparison of the annealing furnaces== | ==Comparison of the annealing furnaces== | ||
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[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| | [[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide|Anneal Oxide furnace (C1)]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| | [[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal-Bond furnace (C3)]] | ||
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[[ | [[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | ||
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[[ | [[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing| Multipurpose Anneal Furnace]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/ | [[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | ||
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[[ | [[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]] | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!General description | !General description | ||
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and | |Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | ||
|Annealing of wafers from | |Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | ||
|Annealing of wafers with Al. | |Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | ||
|Annealing of | |Annealing, oxidation and resist pyrolysis of different samples. | ||
|Rapid thermal annealing | |Rapid thermal processing, usually, annealing (RTA). | ||
| | |Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
*H<sub>2</sub> | |||
*H<sub>2</sub>-N<sub>2</sub> gas mixture | |||
*Vacuum is possible | |||
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*Ar | |||
*N<sub>2</sub> | *N<sub>2</sub> | ||
* | *Low vacuum is possible (min. 2/3 mbar) | ||
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* | *Ar | ||
* | *NH<sub>3</sub> | ||
*H<sub>2</sub> | *O<sub>2</sub> | ||
*5% H<sub>2</sub>/Ar | |||
*High vacuum is possible (10<sup>-6</sup> mbar) | |||
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*Up to 500 <sup>o</sup>C | *Up to 500 <sup>o</sup>C | ||
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*20 <sup>o</sup>C - | *Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨ | ||
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C | |||
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*20 <sup>o</sup>C - | *20 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
* | * '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer''' | ||
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | |||
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* | *700 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
* | *Max. 150 <sup>o</sup>C/s | ||
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*1-30 100 mm wafers | *1-30 100 mm wafers | ||
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*1-30 50 mm, 100 mm or 150 mm wafers | |||
*1-50 200 mm wafers | |||
*Small samples on a carrier wafer, horizontal | *Small samples on a carrier wafer, horizontal | ||
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* | *Single-wafer process | ||
* | *Chips on carrier | ||
*50 mm, 100 mm or 150 mm wafers | |||
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* | *Single-wafer process | ||
*Chips on carrier | |||
*100 mm or 150 mm wafers | |||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and | *All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4. | ||
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*All processed wafers have to be RCA cleaned, except wafers from | *All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3. | ||
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*Wafers with Al | *Wafers with Al | ||
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*Depends on the furnace quartz ware: | *Depends on the furnace quartz ware: | ||
**Clean: Samples that have been RCA cleaned | **Clean: Samples that have been RCA cleaned | ||
**Metal: Almost all materials, permission is needed | **Metal: Almost all materials, permission is needed | ||
**Resist | **Resist (for pyrolysis) | ||
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*Silicon | |||
*Silicon oxides and nitrides | |||
*Quartz | |||
*Metals - ask for permission | |||
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases. | |||
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*Silicon | |||
*Silicon Nitride | |||
*Aluminum Oxide | |||
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Latest revision as of 15:38, 18 January 2024
Feedback to this page: click here
This page is written by DTU Nanolab internal
Annealing
At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
A 20-minute N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.
Comparison of the annealing furnaces
General description | Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | Annealing, oxidation and resist pyrolysis of different samples. | Rapid thermal processing, usually, annealing (RTA). | Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). |
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