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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''
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The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.  
The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.  


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For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).
For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).


====TiO<sub>2</sub> standard recipe====
====TiO<sub>2</sub> standard recipe====
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====TiO<sub>2</sub> deposition rates====
====TiO<sub>2</sub> deposition rates====
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image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C.
</gallery>
</gallery>
Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), April-May 2014.


====TiO<sub>2</sub> results====
====TiO<sub>2</sub> results====
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*[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD|TiO<sub>2</sub> deposition on trenches using ALD]]
Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), 2014.




====TiO<sub>2</sub> deposition on trenches====


Below some SEM images of amorphous TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well.
For TiO<sub>2</sub> deposition on trenches more information can be found here:


<gallery caption="Amorphous titanium dioxide deposited on Si trenches" widths="250px" heights="180px" perrow="3">
*[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD|TiO<sub>2</sub> deposition on trenches using ALD]]
image:SEM-TiO2-120C-1.jpg|
image:SEM-TiO2-120C-2.jpg|
image:SEM-TiO2-120C-3.jpg|
</gallery>
 
Below some SEM images of anatase TiO<sub>2</sub> deposited at 300 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 26 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well.
 
<gallery caption="Anastase titanium dioxide deposited on Si trenches" widths="250px" heights="180px" perrow="3">
image:TiO2 trenches-300C-1.jpg|
image:TiO2 trenches-300C-2.jpg|
image:TiO2 trenches-300C-3.jpg|
</gallery>
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Evgeniy Shkondin, DTU Danchip, 2014.
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