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To request for an e-beam training session, contact e-beam@danchip.dtu.dk; a DTU Danchip personnel will hereafter provide a time slot. For safety reasons, even fully trained users are only authorized to mount substrates into the e-beam cassettes but not authorized to load the cassettes into the autoloader.
To request for an e-beam training session, contact e-beam@nanolab.dtu.dk; a DTU Nanolab personnel will hereafter provide a time slot. For safety reasons, even fully trained users are only authorized to mount substrates into the e-beam cassettes but not authorized to load the cassettes into the autoloader.
   
   


To use the e-beam writer, book the machine via LabManager, and ask help from DTU Danchip staff to load your cassette into the robot loader (autoloader).
To use the e-beam writer, book the machine via LabManager, and ask help from DTU Nanolab staff to load your cassette into the robot loader (autoloader).


   
   


After your exposure, fully trained users can unload their cassettes from the autoloader, unmount their substrates and re-load an empty cassette into the autoloader.
After your exposure, fully trained users can unload their cassettes from the autoloader, unmount their substrates and leave the cassette on the designated table.


If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Danchip personel unmount your substrates.
If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates.
When un-mounting someone's sample, please place them in a single carrier box, with your initials in parentheses, and write - out of E-beam - date - cassette and slot.
 
If your exposure extends into the next users booking, you accept that the next user can stop your exposure without warning - however fair information should be given.


== Location ==
== Location ==
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The e-beam writer is located in a class 10 (ISO 4) cleanroom with tight temperature and moisture control. The room must only be entered when the machines or equipment inside the room is intended to be used. Always wear face-mask and an extra pair of gloves when handling cassettes.
The e-beam writer is located in a class 10 (ISO 4) cleanroom with tight temperature and moisture control. The room must only be entered when the machines or equipment inside the room is intended to be used. Always wear face-mask and an extra pair of gloves when handling cassettes.


The computer controlling the e-beam (EWS/9500) is located in the controller room which is a class 100 cleanroom area. The computers supporting the conversion of the e-beam files are also located in the controller room.
The computer controlling the e-beam (EWS/9500 New) is located in the controller room which is a class 100 cleanroom area. The computers supporting the conversion of the e-beam files are also located in the controller room.
Manuals


There are 3 manuals for the e-beam writer; apart from the main manual (this manual) there is a sdf and jdf-file manual, and a BEAMER manual. They can both be accessed from LabManager under Technical documents.
==Manuals==
 
There are 4 manuals for the e-beam writer; apart from the main manual (this manual) there is a sdf and jdf-file manual, a BEAMER manual and a 2D mark detection manual. They can all be accessed from LabManager under Technical documents.




The original JEOL manual for the e-beam writer FS9500 is located on the O-drive: O:\CleanroomDrive\_Equipment\E-beam
The original JEOL manual for the e-beam writer FS9500 is located on the O-drive: O:\CleanroomDrive\_Equipment\E-beam
Technical Specification
 
==Technical Specification==
The system can be characterized as follows:
The system can be characterized as follows:


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*Electron-beam scanning speeds, f, up to 100 MHz are available (which is maximum scan speed).
*Electron-beam scanning speeds, f, up to 100 MHz are available (which is maximum scan speed).
*The acceleration voltage is 100 kV.
*The acceleration voltage is 100 kV.
*The e-beam writer can pattern structures with a minimum resolution of 12 nm.
*The e-beam writer can pattern structures with a minimum reproducible resolution of 7 nm, depending on the resist type.
*The maximum field-size without stitching is 1000µm x 1000µm.
*The maximum field-size without stitching is 1000µm x 1000µm, but can be smaller if needed.
*The machine has cassettes that can contain either 6 wafers of 2” in size, 2 or 3 wafers of 4” in size, 1 wafer of 6” in size, 1 wafer of 8” in size, 4 chips of different sizes(slot sizes 4 mm, 8 mm, 12 mm, and 20 mm)
*The machine has cassettes that can contain either 6 wafers of 2” in size, 2 or 3 wafers of 4” in size, 1 wafer of 6” in size, 1 wafer of 8” in size, 4 chips of different sizes(slot sizes 4 mm, 8 mm, 12 mm, and 20 mm)


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== Rough estimation of exposure time ==
== Rough estimation of exposure time ==


[[File:currentbeamsize.jpg|400px|right]]
[[Image:old_and_new_column_beam_size_in_one_page_March172019.jpg|400px|right|]]


Based on the equations above, a rough estimate of the exposure time is easily calcualted. In the second sheet of the e-beam logbook, a simple program for calculating the scan speed frequency and an estimation of the exposure time can be found. Note, that the actual writing time will exceed the exposure-time, as the exposure-time calculation doesn’t include pre-calibrations and stage movement during exposure.
Based on the equations above, a rough estimate of the exposure time is easily calcualted. In the second sheet of the e-beam logbook, a simple program for calculating the scan speed frequency and an estimation of the exposure time can be found. Note, that the actual writing time will exceed the exposure-time, as the exposure-time calculation doesn’t include pre-calibrations and stage movement during exposure.
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[[File:CLB.jpg|400px]]
[[File:CLB.jpg|400px]]


From the EBX menu on workspace 1, open the calibration window ‘Clb’. From this window, a previously used condition file (calibration file) dedicated to a certain aperture setting and current setting is loaded, re-calibrated, and saved again.
Calibration of condition files normally consists of a numer of subprograms listed in the table below. The subprograms listed in the blue part of the table are a part of the 'daily' batch of programs.
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 75%"
|-
|-
|-style="background:Black; color:White"
!colspan="2"|Calibration of condition files
|-
|-
|-style="background:WhiteSmoke; color:black"
!style="width: 25%"|Subprogram
!Explanation
|-
|-
|-style="background:WhiteSmoke; color:black"
!style="background:#4682B4; color:Black"|CURRNT
|The stage moves the Faraday's cup to the beam and the machine reads the value of the cup. The machine measures the beam current 5 times and calculate the average of the beam current based on these 5 measurements.
|-
|-
|-style="background:WhiteSmoke; color:black"
!style="background:#4682B4; color:Black"|INITAE
|The AE marks (Absorbed Electrons) is a mark type that is connected to a pn-junction, i.e. the current abosrbed in the mark is measured. The AE mark is a knife-edge mark, i.e. is has (originally) very sharp edges. When the beam (with a well-known frequency) scans over this type of mark and absorbed current simultanously is measured, an estimate of the beam diameter can be found. '''INITAE''' is a subprogram that finds the AE mark and scans it for testing that the machine can find the mark.
|-
|-
|-style="background:WhiteSmoke; color:black"
!style="background:#4682B4; color:Black"|INITBE
|The BE mark (Backscattered Electrons) is a mark type that consists of a suspended grid of metal. The openings in the grid is 500 microns in both X and Y. When the beam scans over this type of mark, backscattered electrons are detected with the BE detector inside the chamber. This type of mark is used to correlate stage position and beam position during calibration. '''INITBE''' is a subprogram that find the BE mark and scans it for testing that the machine can find the mark.
|-


|-
|-style="background:WhiteSmoke; color:black"
!style="background:#4682B4; color:Black"|SFOCUS
|This subprogram finds the minimum beam diameter by scanning an AE mark while changing the focus of the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to obsrve the depth of focus of a certain condition file.
|-


*From the EBX menu on workspace 1, open the calibration window ‘Clb’. From this window, a previously used condition file (calibration file) dedicated to a certain aperture setting and current setting is loaded, re-calibrated, and saved again.
|-
|-style="background:WhiteSmoke; color:black"
!style="background:#4682B4; color:Black"|PDEFBE
|Using a BE mark, this subprogram corrects deflection gain and rotation of the main deflector
|-


== Load and restore a condition file ==
|-
|-style="background:WhiteSmoke; color:black"
!style="background:#4682B4; color:Black"|DISTMEM
|
|-


*Load and restore a condition file, click ‘Select condition file...’, choose the file from the list, e.g. ‘0.2nA_ap7’ and click OK. Restore the file by clicking ‘RESTOR/Edit Parameter...’. From the RESTOR window, click ‘Excecute’; the machine will now restore the conditions of the colum, this will take a few minutes. Exit the RESTOR window by clicking ‘Cancel’.
|-
|-style="background:WhiteSmoke; color:black"
!style="background:#4682B4; color:Black"|DISTBE
|This subprogram measures and corrects the deflection distortion of the beam in the entire writing field (using both deflectors to deflect the beam). The most important input parameter of this subprogram is the ''''allowable convergence value''' which ideally is set to a few nanometers above the convergence value output of PDEFBE. For 0.2 nA, a reasonable convergence value is e.g. 8 nm.
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!style="background:#4682B4; color:Black"|SUBDEFBE
|Using a BE mark, this subprogram corrects deflection gain and rotation of the secondary (sub) deflector
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!DRIFT
|
|-
 
 
|-
|-style="background:WhiteSmoke; color:black"
!HEIMAP
|
|-
 
 
|-
|-style="background:WhiteSmoke; color:black"
!SETWFR
|
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!CHIPAL
|
|-
 
 
|}


== Execute CURRNT == 


Execute ‘CURRNT’ click ‘CURRNT/Execute’. The program ends by stating the average value of five measurements of the e-beam current; write this average current in the logbook.


== Execute INITAE and INITB ==  
=== Load and restore a condition file ===


*Execute  INITAE; click 'INITAE/Execute'.
*Load and restore a condition file, click ‘Select condition file...’, choose the file from the list, e.g. ‘0.2nA_ap7’ and click OK. Restore the file by clicking ‘RESTOR/Edit Parameter...’. From the RESTOR window, click ‘Excecute’; the machine will now restore the conditions of the colum, this will take a few minutes. Exit the RESTOR window by clicking ‘Cancel’.


=== CURRNT, INITAE, and INITBE === 


*Execute ‘CURRNT’ click ‘CURRNT/Execute’. The program ends by stating the average value of five measurements of the e-beam current; write this average current in the logbook.
*Execute  INITAE; click 'INITAE/Execute'.
*Execute INITBE; click 'INITBE/Execute'.
*Execute INITBE; click 'INITBE/Execute'.


== Execute 'daily' ==
 
=== Execute 'daily' ===


*Execute the pre-defined set of sub-programs called ‘daily’: click 'Commands/Batch...'. Click ‘Condition file...’, choose ‘daily’, and click OK and execute. This set of programs takes around 8-10 minutes to run.
*Execute the pre-defined set of sub-programs called ‘daily’: click 'Commands/Batch...'. Click ‘Condition file...’, choose ‘daily’, and click OK and execute. This set of programs takes around 8-10 minutes to run.
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1 Open the exposure program, ‘Exp’, from the EBX Menu.
#Open the exposure program, ‘Exp’, from the EBX Menu.
 
#Find and load your magazine file: click ‘File/Magazine File’ and choose the magazine file from the location ‘/home/eb0/jeoleb/job/danchip’.
#Check that the name of the desired magazine-file appears in the Magazine filename field, then click ‘Execute’.
 
#Click ‘YES’ if you agree on the information in the ‘Pattern Writing Execution Check’-window.
2 Find and load your magazine file: click ‘File/Magazine File’ and choose the magazine file from the location ‘/home/eb0/jeoleb/job/danchip’.
 
 
3 Check that the name of the desired magazine-file appears in the Magazine filename field, then click ‘Execute’.
 
 
4 Click ‘YES’ if you agree on the information in the ‘Pattern Writing Execution Check’-window.


   
   
Before the exposure starts, some inital calibration will be performed such as CURRNT and HEIMAP. When measuring HEIMAP, the last saved condition of HEIMAP will be used.
Before the exposure starts, some inital calibration will be performed such as CURRNT and HEIMAP. When measuring HEIMAP, the last saved condition of HEIMAP will be used.




After finished exposure, the machine will display whether the exposure succeeded.
After finished exposure, the machine will display whether the exposure succeeded.
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== AGCRG ==
== AGCRG ==


[[File:AGCRG1.png|400px]][[File:AGCRG2.png|400px]]
{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
! width="500" |
! width="500" |
|- border="0"
|[[File:AGCRG1.png|400px]]
|[[File:AGCRG2.png|400px]]
|- align="center"
| Open and edit AGCRG, in the program window <br> '''1''' Enter the measured (from pre-aligner output) P mark position <br>'''2''' Click 'RG mark detect condition: Setting' and adjust scan width and position. Use a large scan width (200-600 microns). In 'Scan type' choose 'fine scan', 'box scan' and choose the correct mark (cross or L-shaped). Start with an 'X only' scan. <br>'''3''' Save and execute AGCRG || If the program finds the mark, ask the program to transfer the gain settings to SETWFR P (both rough and fine) or SETWFR Q. Scan again with same settings but choose 'Y only' in the 'RG mark detect conditions'.
|}




Open and edit AGCRG, in the program window


*Enter the measured (from pre-aligner output) P mark position
'''If the program does not find the mark''', try a larger scan width and execute AGCRG again, and/or try to scan 'Y only' instead.
*Click 'RG mark detect condition: Setting' and adjust scan width and position. Use a large scan width (200-600 microns). In 'Scan type' choose 'fine scan', 'box scan' and choose the correct mark (cross or L-shaped). Start with an 'X only' scan.
*Save and execute AGCRG


If the program finds the mark, ask the program to transfer the gain settings to SETWFR P (both rough and fine) or SETWFR Q. Scan again with same settings but choose 'Y only' in the 'RG mark detect conditions'.
If the program does not find the mark, try a larger scan width and execute AGCRG again, and/or try to scan 'Y only' instead.
If the program does not find the mark you can find it manually using the SEM. Remember to minimise the use of SEM:
If the program still does not find the mark you can find it manually using the SEM. Remember to minimise the use of SEM:


*Open the Stage program from EBX menu
*Open the Stage program from EBX menu
*In 'sspvideo' click beam/beam-off
*In 'sspvideo' click beam/beam-off
'Move stage to mark position (setting/movement)
*'Move stage to mark position (setting/movement)
*In 'sspvideo' click 'change/BE SEM'
*In 'sspvideo' click 'change/BE SEM'
*open 'adjust' and 'Setting' and start the SEM.
*open 'adjust' and 'Setting' and start the SEM.
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Enter approximate mark position into AGCRG and execute AGCRG again.
Enter approximate mark position into AGCRG and execute AGCRG again.
<br>
<br>


== SETWFR ==
== SETWFR ==
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= Troubleshooting =
= Troubleshooting =


    No EBX Menu is open in any of the desktops: Open a console (click on arrow above the text ‘CPU’ on bottom menu bar) and from location (DTU)/ type ‘ebxmenu’.
'''No EBX Menu is open in any of the desktops:''' Open a console (click on arrow above the text ‘CPU’ on bottom menu bar) and from location (DTU)/ type ‘ebxmenu’.




    The ACHK or WRTEST programs are nowhere visible: Open Analysis form EBX Menu; from here you can find ACHK and WRTEST.  
'''The ACHK or WRTEST programs are nowhere visible:''' Open Analysis form EBX Menu; from here you can find ACHK and WRTEST.  




    I forgot to tick the EXCH EVAC before transferring my cassette from the e-beam writer to the autoloader: Transfer your cassette back into the e-beam ('Carry in'), then tick 'EXCH EVAC' on, and click 'Carry out' to transfer the cassette to the autoloader and pump down the exchange chamber
'''I forgot to tick the EXCH EVAC''' before transferring my cassette from the e-beam writer to the autoloader: Transfer your cassette back into the e-beam ('Carry in'), then tick 'EXCH EVAC' on, and click 'Carry out' to transfer the cassette to the autoloader and pump down the exchange chamber




Basic unix operations
== Basic unix operations ==


 
<pre>
cd job
cd job                               Change directory to 'job'
Change directory to 'job'
cd ..                               Go one directory up (parent directory)
cd ..
dir                             List the directories and folders
Go one directory up (parent directory)
CTRL+p (CTRL+n)                     Scroll to previous (next) command
dir List the directories and folders
Click on middle mouse button         Copy highlighted text, or paste copied text
CTRL+p (CTRL+n) Scroll to previous (next) command
Tripple-click on left mouse button   Highlights all text in a window (works in some windows only)
Click on middle mouse button
</pre>
Copy highlighted text, or paste copied text
Tripple-click on left mouse button
Highlights all text in a window (works in some windows only)


== Calibration problems ==
== Calibration problems ==


    No current can be detected when executing CURRNT: Call one of the contact persons to get help.
'''No current can be detected when executing CURRNT:''' Use another condition file or call one of the contact persons to get help.




    The DISTBE subprogram runs for more than 15 minutes: Stop the subprogram from the calibration window (Command/Subprogram Stop). Click 'DISTBE/Edit Parameter'. Click 'Settings'. Change the scan position by 0.2 microns, both in X and Y. Save and execute DISTBE again. If DISTBE runs successfully, acknowledge the write to memory request, and run the last subprogram of the 'daily' batch manually. If it does not help, call one of the contact persons for help.
'''The DISTBE subprogram runs for more than 15 minutes:'''
*Stop the subprogram from the calibration window (Command/Subprogram Stop).  
*Click 'DISTBE/Edit Parameter'. Click 'Settings'.  
*Change the scan position by 0.2 microns, both in X and Y.  
*Add a few nanometer to the 'allowable convergence value'.
*Save and execute DISTBE again.  
If DISTBE runs successfully, acknowledge the 'write to memory'-request, and run the last subprogram of the 'daily' batch manually. If it does not help, call one of the contact persons for help.




    The detection of AE/BE or wafer marks gives an either too saturated or too noisy signal: Edit the AGCAE/AGCBE or AGCRG programs by entering the position of your AE/BE or wafer mark and execute the program. When the program finish successfully, apply the settings to other relevant subprograms; see 'the INITAE or INITBE mark cannot be detected' section.
'''The detection of AE/BE or wafer marks gives an either too saturated or too noisy signal:'''
*Edit the AGCAE/AGCBE or AGCRG programs by entering the position of your AE/BE or wafer mark and execute the program.  
*When the program finish successfully, apply the settings to other relevant subprograms; see 'the INITAE or INITBE mark cannot be detected' section.




    The INITAE or INITBE mark cannot be detected: The system has probably drifted too far away from the mark to be able to detect the mark. Increase the scan width by doing this:
'''The INITAE or INITBE mark cannot be detected:'''
        Highlight INITAE and click 'Edit parameter'
The system has probably drifted too far away from the mark to be able to detect the mark. Increase the scan width by doing this:
        From the INITAE window, click 'AE mark detection condition Setting'
*Highlight INITAE and click 'Edit parameter'
        Increase the scan width to around 40 µm, click apply, and execute INITAE again
*From the INITAE window, click 'AE mark detection condition Setting'
        If the mark has been detected, click Update in the INITAE-window when the subprogram has finished
*Increase the scan width to around 40 µm, click apply, and execute INITAE again
        Decrease the scan width to its original value, click apply and execute INITAE again
*If the mark has been detected, click Update in the INITAE-window when the subprogram has finished
*Decrease the scan width to its original value, click apply and execute INITAE again


    The same procedure applies to INITBE; here, the scan width can be increased to more than 40 µm, though. If the marks still cannot be detected, call one of the contact persons to get help.  
The same procedure applies to INITBE; here, the scan width can be increased to more than 40 µm, though. If the marks still cannot be detected, call one of the contact persons to get help.  


When the AE and BE marks has been found, the settings should be applied to all other relevant subprograms:


    When the AE and BE marks has been found, the settings should be applied to all other relevant subprograms:


*Click 'Setting..' in the INITAE window
*Click 'Applies to another subprogram' in the 'detection condition' window
*Click 'All Select' in the 'applies to another subprogram' window; this highlights all subprograms on the list. Click 'Subprograms that can be set' to execute.


        Click 'Setting..' in the INITAE window
        Click 'Applies to another subprogram' in the 'detection condition' window
        Click 'All Select' in the 'applies to another subprogram' window; this highlights all subprograms on the list. Click 'Subprograms that can be set' to execute.


 
The same procedure applies to the BE mark detection. Test whether subprograms can be executed by running e.g. SFOCUS and PDEFBE (quite short programs).
    The same procedure applies to the BE mark detection. Test whether subprograms can be executed by running e.g. SFOCUS and PDEFBE (quite short programs).
    
    


== Alignment problems ==
== Alignment problems ==


    SETWFR cannot detect my P and Q marks: Unload your wafer/chip, remove the resist from your wafer marks and repeat your exposure with manual alignment:
'''SETWFR cannot detect my P and Q marks:''' Unload your wafer/chip, remove the resist from your wafer marks and repeat your exposure with manual alignment:
 
    Alignment commands for manual alignment (see 'sdf- and jdf-file preparation' manual):
 
    Change the global mark detection in the sdf-file: GLMDET M (i.e. manual detection). Recompile the magazine file.
 
    Calibrate as without alignment.
    Execute exposure, wait until the machine prompts for action:
 
        The machine will start a subprogram 'SETWFR' right before the exposure and move the stage to the position of the P-mark as stated in the jdf-file. Click 'YES' to manually align the machine to the global marks. In order to move the stage to the correct position of the P-mark (as detected with the optical pre-alignment), open the 'Stg' program from the EBX Menu.


           
'''Alignment commands for manual alignment (see 'sdf- and jdf-file preparation' manual):'''


        Move the target position (stage position) by clicking 'Setting...' and edit the X and Y parameters to the values found from the pre-alignment. Click 'Movement' to execute the movement.
*Change the global mark detection in the sdf-file: GLMDET M (i.e. manual detection). Recompile the magazine file.
        From the sspvideo (can be opened by 'Image' from the EBX Menu), start the SEM from 'Change/SEM'. Adjust the Brightness/Contrast and scan width by opening the Image Setting and Image Adjustment windows ('Setting...' and 'Adjustment...' buttons).
*Calibrate as without alignment.
        Find the P-mark by adjusting the stage position using the step movement from the stage controller. When the mark is centered, click 'Pattern writing continuation' and repeat the procedure for the Q-mark. Finish the global alignment by clicking 'Pattern writing continuation', and the exposure will start.
*Execute exposure, wait until the machine prompts for action:
*The machine will start a subprogram 'SETWFR' right before the exposure and move the stage to the position of the P-mark as stated in the jdf-file. Click 'YES' to manually align the machine to the global marks. In order to move the stage to the correct position of the P-mark (as detected with the optical pre-alignment), open the 'Stg' program from the EBX Menu.
*Move the target position (stage position) by clicking 'Setting...' and edit the X and Y parameters to the values found from the pre-alignment. Click 'Movement' to execute the movement.
*From the sspvideo (can be opened by 'Image' from the EBX Menu), start the SEM from 'Change/SEM'. Adjust the Brightness/Contrast and scan width by opening the Image Setting and Image Adjustment windows ('Setting...' and 'Adjustment...' buttons).
*Find the P-mark by adjusting the stage position using the step movement from the stage controller. When the mark is centered, click 'Pattern writing continuation' and repeat the procedure for the Q-mark. Finish the global alignment by clicking 'Pattern writing continuation', and the exposure will start.