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'''Feedback to this page''': '''[mailto:LabAdviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Copper click here]'''
'''Feedback to this page''': '''[mailto:LabAdviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Copper click here]'''


== Deposition of Cu ==
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.


==Deposition of Copper using sputter deposition technique==


* [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|Sputtering of Cu in PVD co-sputter/evaporation]]
= Deposition of Cu =
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. We have also recently developed a process with thermal evaporation (2024). In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.


==Studies of Cu deposition==


[[/Deposition of Copper/Resistive thermal evaporation of Copper|Resistive thermal evaporation of copper]]
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator'' - this particular machine has been decommissioned, but the results may still be of interest.
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)''
==Comparison of equipment for Cu deposition==
{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  


! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
|E-beam deposition of Cu
|E-beam deposition of Cu
(line-of-sight deposition)
|Sputter deposition of Cu
|Sputter deposition of Cu
(not line-of-sight deposition)
|Sputter deposition of Cu
|Sputter deposition of Cu
|Electroplating of Cu
(not line-of-sight deposition)
 
|-
|-


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!Pre-clean
!Pre-clean
|Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|None


|-
|-
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!Layer thickness
!Layer thickness
|10Å to 0.5µm*
|10Å to 1µm*
|10Å to 1µm*  
|10Å to 1µm**  
|10Å to 1µm*  
|10Å to 1µm**
| thickness window undefined yet


|-
|-
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! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|1-10 Å/s
|
|~ 1 Å/s
Depending on [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|process parameters]]
|Depends on process parameters, at least up to 8.7 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
| ~1Å/s
|
|-
|-


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! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*smaller pieces
*smaller pieces
|
* 4x6" wafers or
* 12x4" wafers or
* 12x2" wafers
|
|
*smaller pieces
*smaller pieces
*Up to 1x6" wafers
*Up to 1x6" wafers
|
|
*1x4" wafer
*Up to 10x4" or 6" wafers
*or many smaller pieces
|-
|-


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|
|
* Silicon
* Almost any that does not degas - also if you plan to use heating.
* Silicon oxide
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals


|
|
* Silicon
* Almost any that does not degas.
* Silicon oxide
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
| almost any
| Base Materials:
*Silicon
Seed metals:
*Ti(10nm) + Au (80nm) (Recommended)
*Cr(10nm) + Au (80nm) (Recommended)
|-style="background:WhiteSmoke; color:black"
! Comment
|
|
|
|
*Almost that does not degas also if you plan to heat the substrate - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|Sample must be compatible with plating bath. Seed metal layer required to run electroplating process.  
|}
|}


'''*''' ''To deposit layers thicker then 200 nm permission is required (contact Thin film group)''
'''*''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
 
== Studies of Cu deposition processes ==


[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel''
'''**''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
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