Jump to content

Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions

← Older edit
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
No edit summary
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
No edit summary
 
(13 intermediate revisions by 2 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_blazed_gratings click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_blazed_gratings click here]'''  
<br> {{CC-bghe1}}


<gallery caption="Some examples of blazed gratingens in fused silica etched with Cr and DUV resist as masking layer" widths="300px" heights="250px">
*60 nm Barc
 
*360 nm KRF resist
Image:IBE 30min -Cr1.jpg |'''30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=550mA<br>*RF power=1300W<br>*I(B)=500mA<br>*V(B)=600V<br>*V(AC,B)=400V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=10sccm<br>*CHF3 flow=0sccm
Image:15min+30min5.jpg|'''15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm


''by bghe@nanolab'' experiments made in June/July 2012
<gallery widths="300px" heights="250px" caption="Some examples of blazed gratings in fused silica etched with Cr and DUV resist as masking layer">
Image:IBE 30min -Cr1.jpg |'''30 min etch with 100 nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N) = 400 mA<br>*RF power = 1300 W<br>*I(B) = 300 mA<br>*V(B) = 300 V<br>*V(AC,B)=500 V<br>*Ar(N) flow = 5 sccm<br>*Ar(B) flow = 5 sccm<br>*CHF3 flow = 15 sccm
Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N) = 400 mA<br>*RF power = 1300 W<br>*I(B) = 300 mA<br>*V(B) = 300 V<br>*V(AC,B) = 500 V<br>*Ar(N) flow = 5 sccm<br>*Ar(B) flow = 5 sccm<br>*CHF3 flow = 15 sccm
Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N) = 550 mA<br>*RF power = 1300 W<br>*I(B) = 500 mA<br>*V(B) = 600 V<br>*V(AC,B) = 400 V<br>*Ar(N) flow = 5 sccm<br>*Ar(B) flow = 10 sccm<br>*CHF3 flow = 0 sccm
Image:15min+30min5.jpg|'''15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N) = 400 mA<br>*RF power = 1300 W<br>*I(B) = 300 mA<br>*V(B) = 300 V<br>*V(AC,B) = 500 V<br>*Ar(N) flow = 5 sccm<br>*Ar(B) flow = 5 sccm<br>*CHF3 flow = 15 sccm
</gallery>
</gallery>
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_blazed_gratings"