Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
*60nm Barc
*360nm KRF resist


<gallery caption="Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer" widths="300px" heights="250px">
''by bghe@nanolab'' experiments made in June/July 2012
<gallery caption="Some examples of blazed gratings in fused silica etched with Cr and DUV resist as masking layer " widths="300px" heights="250px">


Image:IBE 30min -Cr1.jpg |'''30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:IBE 30min -Cr1.jpg |'''30 min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings'''
Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=550mA<br>*RF power=1300W<br>*I(B)=500mA<br>*V(B)=600V<br>*V(AC,B)=400V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=10sccm<br>*CHF3 flow=0sccm
Image:15min+30min5.jpg|'''15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:15min+30min5.jpg|'''15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm


</gallery>
</gallery>

Latest revision as of 16:28, 6 February 2023

Feedback to this page: click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

  • 60nm Barc
  • 360nm KRF resist

by bghe@nanolab experiments made in June/July 2012

  • Some examples of blazed gratings in fused silica etched with Cr and DUV resist as masking layer

  • 30 min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm

  • 45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm

  • 20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=550mA
    *RF power=1300W
    *I(B)=500mA
    *V(B)=600V
    *V(AC,B)=400V
    *Ar(N) flow=5sccm
    *Ar(B) flow=10sccm
    *CHF3 flow=0sccm

  • 15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm

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