Specific Process Knowledge/Etch/ICP Metal Etcher/Barc Etch: Difference between revisions
No edit summary |
|||
| (9 intermediate revisions by the same user not shown) | |||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Barc_Etch click here]''' | ||
<br> {{CC1}} | |||
==Barc Etch== | ==Barc Etch== | ||
Etching barc with a | Etching barc with a CF4 recipe for barc etching is a good idea if you are on the limit of having enough DUV resist mask to reach etch depth you need. Here is an example of a barc etch I have started testing. I have also tried with and O2 descum process for comparison. | ||
{| border="1" cellspacing="1" cellpadding="2" align="left" | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||
! Parameter | ! Parameter | ||
! Barc etch with CF4 | ! Barc etch with CF4 | ||
! Barc etch with O2 | |||
|- | |- | ||
|Coil power||800W | |Coil power||800W||120w | ||
|- | |- | ||
|Platen power||100W | |Platen power||100W||15W | ||
|- | |- | ||
|Pressure||3 mTorr | |Pressure||3 mTorr||5mTorr | ||
|- | |- | ||
|Flow rate CF4||4 sccm | |Flow rate CF4||4 sccm|| | ||
|- | |- | ||
|Flow rate H2||20sccm | |Flow rate H2||20sccm|| | ||
|- | |||
|Flow rate O2||||10sccm | |||
|- | |||
|T||0 degrees||0 degrees | |||
|- | |- | ||
|} | |} | ||
| Line 24: | Line 28: | ||
{| border="1" cellspacing="1" cellpadding="2" align="left" | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||
! Parameter | ! Parameter | ||
! Results | ! Results with 'Barc etch with CF' | ||
! Results with 'Barc etch with O2' | |||
|- | |- | ||
|Etch rate in barc|| | |Etch rate in barc||'''52 nm in 30s''' ''[bghe 20150519]''||'''62 nm in 50s''' ''[bghe 20150521]'' | ||
|- | |- | ||
|Etch rate in KRF resist||27 nm in 30s ''[bghe 20150519]'' | |Etch rate in KRF resist||'''27 nm in 30s''' ''[bghe 20150519]''||'''73 nm in 50s''' ''[bghe 20150521]'' | ||
|- | |- | ||
|Selectivity KRF:Barc||1:2 | |Selectivity KRF:Barc||'''1:2''' ||'''1:0.8''' | ||
|- | |- | ||
|Etch 65nm barc||Use 40-45s | |Etch 65nm barc||'''Use 40-45s'''||'''Use 55-60s''' | ||
|- | |- | ||
|} | |} | ||
<br/> | <br/> | ||
Latest revision as of 15:54, 6 February 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Barc Etch
Etching barc with a CF4 recipe for barc etching is a good idea if you are on the limit of having enough DUV resist mask to reach etch depth you need. Here is an example of a barc etch I have started testing. I have also tried with and O2 descum process for comparison.
| Parameter | Barc etch with CF4 | Barc etch with O2 |
|---|---|---|
| Coil power | 800W | 120w |
| Platen power | 100W | 15W |
| Pressure | 3 mTorr | 5mTorr |
| Flow rate CF4 | 4 sccm | |
| Flow rate H2 | 20sccm | |
| Flow rate O2 | 10sccm | |
| T | 0 degrees | 0 degrees |
| Parameter | Results with 'Barc etch with CF' | Results with 'Barc etch with O2' |
|---|---|---|
| Etch rate in barc | 52 nm in 30s [bghe 20150519] | 62 nm in 50s [bghe 20150521] |
| Etch rate in KRF resist | 27 nm in 30s [bghe 20150519] | 73 nm in 50s [bghe 20150521] |
| Selectivity KRF:Barc | 1:2 | 1:0.8 |
| Etch 65nm barc | Use 40-45s | Use 55-60s |