Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''  


[[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]]
===As the system is not being used for deposition this information is no long relevant===
It is being keep in case we will start up the depostion again.<br>
 
<!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] -->


{| border="1" style="text-align: center;"
{| border="1" style="text-align: center;"
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|-style="background:Black; color:White"


|colspan="6" style="text-align: center;" style="background: black;" style="text-color:white"; | '''Material parameters for calculating the tooling factor'''
|colspan="6" style="text-align: center;" | '''Material parameters for using the crystal monitors'''


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!22-7-2014
!2014-07-22
|1.573 (wafer center)
|157.3% (wafer center)
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|-
|-
|-
|-
!B
!2015-09-08
|B1
|132 %
|B2
|B2
|B3
|B3
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|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 2'''
|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for crystal thickness monitor 2'''


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Latest revision as of 13:58, 22 June 2023

Feedback to this page: click here

As the system is not being used for deposition this information is no long relevant

It is being keep in case we will start up the depostion again.


Material parameters for using the crystal monitors
Material Density Z ratio
TiO2 4.260 0.400
SiO2 2.648 1.000
Si 2.320 0.712


Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
2014-07-22 157.3% (wafer center)
2015-09-08 132 % B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
A A1 A2 A3
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
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