Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions

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==Etching of Titanium==
==Etching of Titanium==
Etching of Titanium is done wet at Danchip. We have two solutions for titanium etching:
 
# BHF
# Cold RCA1 (as stripper)


Do it by making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. BHF etching can also take place in the PP-etch bath in the fume hood in cleanroom 2.
Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
*[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etching of Ti by dry etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Ti etch|Sputtering of Ti]]
<br clear="all" />


==Comparison of Titanium Etch Methodes==


===Comparing the two solutions===
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! BHF
! Cold RCA1
|-
|'''General description'''
|
Etch of titanium with or without photoresist mask.
|
Etch of titanium (as stripper)
|-
|-
|'''Chemical solution'''
|-style="background:silver; color:black"
|HF:NH<math>_4</math>F 
!
|NH<math>_3</math>OH:H<math>_2</math>O<math>2</math>:H<math>_2</math>O - 1:1:5
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 2]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|'''Process temperature'''
|Room temperature
|Room temperature


|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|BHF Etch of titanium with or without photoresist mask.
|Cold RCA1 mix etch of titanium (as stripper or with eagle resist).
|Dry plasma etch of Ti
|Sputtering of Ti - pure physical etch
|-
|-


|'''Possible masking materials'''
|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
|
Photoresist (1.5 µm AZ5214E)
*~?nm/min
|None
|
*~?nm/min
|
*~50-200 nm/min (depending on features size and etch load and recipe settings)  
|  
*~20nm/min
|-
 
|-
|-
|'''Etch rate'''
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
*Isotropic
|
|
Not known (it bubbles while etching)
*Isotropic
|
|
Not known
*Anisotropic (vertical sidewalls)
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
 
 
|-
|-
|'''Batch size'''
|-style="background:LightGrey; color:black"
!Substrate size
|
|
1-5 4" in beaker
*Any size and number that can go inside the beaker in use
1-25 wafers at a time in PP-etch bath
|
|
1-5 4" wafer at a time
*Any size and number that can go inside the beaker in use
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
*<nowiki>#</nowiki>1 150mm wafers
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|'''Etch bath'''
 
|Beaker or PP-etch bath in the fume hood in cleanroom 2.
|-
|-
|'''Allowed materials'''
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|
|
No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2.
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
No restrictions when used in beaker.
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
*Silicon
*Silicon oxides
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Latest revision as of 13:36, 18 April 2024

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching of Titanium

Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Titanium Etch Methodes

Ti wet etch 1 Ti wet etch 2 ICP metal IBE (Ionfab300+)
Generel description BHF Etch of titanium with or without photoresist mask. Cold RCA1 mix etch of titanium (as stripper or with eagle resist). Dry plasma etch of Ti Sputtering of Ti - pure physical etch
Etch rate range
  • ~?nm/min
  • ~?nm/min
  • ~50-200 nm/min (depending on features size and etch load and recipe settings)
  • ~20nm/min
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • Any size and number that can go inside the beaker in use
  • Any size and number that can go inside the beaker in use
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
  • #1 150mm wafers

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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