Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''
+===As the system is not being used for deposition this information is no long relevant===
+It is being kept in case we will start up the deposition again.<br>
+<!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] -->
+{| border="1" style="text-align: center;"
+|-style="background:Black; color:White"
+|colspan="6" style="text-align: center;" | '''Material parameters for using the crystal monitors'''
+|-
+!scope="row" |Material
+!Density
+!Z ratio
+|-
+|-
+|TiO<sub>2</sub>
+|4.260
+|0.400
+|-
+|-
+|SiO<sub>2</sub>
+|2.648
+|1.000
+|-
+|-
+|Si
+|2.320
+|0.712
+|}
 {| border="1" style="text-align: center;"
 |-
@@ Line 13: / Line 50: @@
 |-
-!22-7-2014
+!2014-07-22
-|1.573 (wafer center)
+|157.3% (wafer center)
 |
 |
 |-
 |-
-!B
+!2015-09-08
-|B1
+|132 %
 |B2
 |B3
@@ Line 44: / Line 81: @@
 |-
-|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 2'''
+|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for crystal thickness monitor 2'''
 |-
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 |-
-!22-7-2014
+!A
-|1.573 (wafer center)
+|A1
-|
+|A2
-|
+|A3
 |-
 |-