Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly1: Difference between revisions

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! width="40" | Comments
! width="40" | Comments
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|-
| 20/11-2014
| 3/12-2014
| 6" Wafer with 210 nm oxide and 1800 nm polysilicon
| 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier
| standard stepper mask (50 nm barc + 320 nm krf)
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50+ %  
| Si / 50+ %  
| Pegasus/jmli
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| 10 minute TDESC clean + 45 sec barc etch
| danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes  
| nanolab/showerhead/Cpoly1, 20 cycles or 2:04 minutes  
| S004675
| S004724
| New showerhead
|  
|  
|
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Latest revision as of 10:12, 9 August 2022


Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
3/12-2014 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier standard stepper mask (50 nm barc + 320 nm krf) Si / 50+ % Pegasus/jmli 10 minute TDESC clean + 45 sec barc etch nanolab/showerhead/Cpoly1, 20 cycles or 2:04 minutes S004724 New showerhead

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