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Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions

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The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before.
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
 
 
The Anneal Oxide furnace (C1) is the used for annealing, and for dry and wet oxidation of 4" and 6" wafers.
 
Water vapour for wet oxidation is generated by use of a steamer, which gives a very good oxide quality and uniformity.
 
A new steamer has been installed in August 2024. The new steamer is from Bronkhorst and similar to the one on the E1. The old steamer was from Rasirc.
 
<!-- ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] )-->




==Calculation for wet oxidation==
==Calculation for wet oxidation==
<b><span style="color:Red">The information is this section is not up-to-date, because it is based on oxidation results obtained with the old Rasirc steamer. This steamer has been replaced with a Bronkhorst steamer in August 2024, and this has slightly affected the oxidation rate for wet oxide.</span></b>


The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:
The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:


[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1).xlsx|'''Calculation for wet oxidation''']]
[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1)_version_2.xlsx|'''Calculation for wet oxidation''']] ''updated on June 2017''
 
==Test of the wet oxidation by steamer== 
 
<b><span style="color:Red">The information is this section is not up-to-date, because it is based on oxidation results obtained with the old Rasirc steamer. This steamer has been replaced with a Bronkhorst steamer in August 2024, and this has slightly affected the oxidation rate for wet oxide.</span></b>


==Test of the wet oxidation by steamer==
''by Patama Pholprasit @nanolab in October 2014''
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'''Anneal:''' Same as process temperature for 20 minutes with N<sub>2</sub>: 6 SLM
'''Anneal:''' Same as process temperature for 20 minutes with N<sub>2</sub>: 6 SLM


'''Test Wafers:''' N-Type <100> No RCA Clean
'''Test Wafers:''' 4 inch Silicon wafers, N-Type <100> No RCA Clean


====Results (2)====
====Results (2)====