Specific Process Knowledge/Doping: Difference between revisions
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== Doping your wafer == | == Doping your wafer == | ||
This page is about doping your wafer or making a thin film layer doped with boron, | This page is about doping your wafer or making a thin film layer doped with boron, phosphorus or germanium. The links below direct you to various doping results achieved by the use of different processes and heat treatments. | ||
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorus by thermal pre-deposition and drive-in | |||
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in | |||
*[[Specific Process Knowledge/Thermal Process/Oxide mask|Oxide mask thickness]] - Required oxide mask thickness for pre deposition and diffusion | |||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus | |||
*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG) | |||
*Ion implantation (not possible at Nanolab) | |||
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==Comparison of different doping | ==Comparison of different doping processes== | ||
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![[Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace|Phosphorous predep]] | ![[Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace|Phosphorous predep]] | ||
![[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron predep]] | ![[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron predep]] | ||
![[Specific Process Knowledge/Thin_film_deposition/PECVD|PECVD doped thin film]] | ![[Specific Process Knowledge/Thin_film_deposition/PECVD|PECVD doped thin film]] | ||
![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped | ![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped poly/amorphous Si ]] | ||
!Ion implantation | |||
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!Generel description | !Generel description | ||
|Dopants introduced by diffusion from gas-phase ( | |Dopants introduced by diffusion from gas-phase (POCl<sub>3</sub>). A thin phosphorous glass is formed on the substrate and phosphorous atoms are driven in. The phosphorous glass is afterward removed by a short BHF etch. Often further annealing is desired in order to redistribute the dopants in the material. This is done at 800°C - 1150°C in either high temperature annealing furnaces or by rapid thermal annealing. | ||
|Dopants introduced by diffusion from solid source wafers | |Dopants introduced by diffusion from solid source wafers containing B<sub>2</sub>O<sub>3</sub>. A boron glass is formed on the substrate and boron atoms are driven in. The boron glass is afterward removed by a low temperature oxidation process (1 hour at 800°C-900°C) in the boron drive in furnace (A1) followed by a BHF etch. Often further annealing is desired in order to redistribute the dopants in the material. This is done at 800°C - 1150°C in either high temperature annealing furnaces or by rapid thermal annealing. | ||
|Deposition of doped thin film (oxides or nitrides) | |Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | ||
|Dopants introduced by in-situ doping of poly/amorphous Si | |Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | ||
|Dopant ions are implanted into the substrate by a high-energy ion beam. Contrary the other doping techniques the doping concentration has a peak inside the substrate when introduced by ion-implantation. Ion implantation cannot be done at Nanolab but IBS (Ion Beam Services) offers ion-beam implantation as a service. See more at the homepage of IBS: http://www.ion-beam-services.com/about_us.htm. When wafers return from Ion implantation they need a clean before entering the cleanroom. Activation and redistribution of the dopants is required and is done by a high temperature anneal (600°C-1000°C) in the high temperature furnaces or by rapid thermal anneal. | |||
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!Process Temperature | !Process Temperature | ||
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*900°C - 1150°C | *900°C - 1150°C | ||
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*1050°C - 1125°C | *1050°C - 1125°C | ||
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*300°C | *300°C | ||
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*560°C - 620°C | *560°C - 620°C | ||
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*Room temperature | |||
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!Dopant | !Dopant | ||
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* | *Phosporous (POCl<sub>3</sub>) | ||
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*Boron (solid source wafers containing B<sub>2</sub>O<sub>3</sub>) | *Boron (solid source wafers containing B<sub>2</sub>O<sub>3</sub>) | ||
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* | *Phosphorous (PH<sub>3</sub>) | ||
*Boron (B<sub>2</sub>H<sub>6</sub>) | *Boron (B<sub>2</sub>H<sub>6</sub>) | ||
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* | *Phosphorous (PH<sub>3</sub>) | ||
*Boron (B<sub>2</sub>H<sub>6</sub> or BCl<sub>3</sub>) | *Boron (B<sub>2</sub>H<sub>6</sub> or BCl<sub>3</sub>) | ||
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*See more information at [http://www.ion-beam-services.com/about_us.htm IBS]. | |||
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!Substrate size | !Substrate size | ||
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*100 mm wafers | *100 mm wafers | ||
*50 mm wafers | |||
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*100 mm wafers | *100 mm wafers | ||
*50 mm wafers | |||
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*small samples | *small samples | ||
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*150 mm wafers | *150 mm wafers | ||
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*100 mm wafers (Boron and | *100 mm wafers (Boron and Phosphorous) | ||
*150 mm wafers (only Boron) | *150 mm wafers (only Boron) | ||
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*See more information at [http://www.ion-beam-services.com/about_us.htm IBS]. | |||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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*Oxide | *Oxide | ||
*Nitride | *Nitride | ||
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*See more information at [http://www.ion-beam-services.com/about_us.htm IBS]. | |||
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