Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions
No edit summary |
|||
| (10 intermediate revisions by 2 users not shown) | |||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DryEtchProcessing click here]''' | ||
<!--Checked for updates on 14/5-2018 - ok/jmli --> | |||
= Techniques, hardware and challenges common to all dry etch tools = | = Techniques, hardware and challenges common to all dry etch tools = | ||
This page contains information that is common to dry etch instruments. | This page contains information that is common to dry etch instruments. | ||
{| border ="0" align="left" valign="top" | {| border ="0" align="left" valign="top" | ||
| Line 12: | Line 11: | ||
|- | |- | ||
| style="background: LightGray"| [[/Comparison| Hardware comparison]] | | style="background: LightGray"| [[/Comparison| Hardware comparison]] | ||
| style="background:#DCDCDC;"| Comparison of the different hardware setups | | style="background:#DCDCDC;"| Comparison of the different hardware setups of our dry etchers | ||
|- | |- | ||
| style="background: LightGray"| [[/Bonding| | | style="background: LightGray"| [[/Bonding| Using carrier wafer]] | ||
| style="background: #DCDCDC"| Processing different sizes of substrates by bonding | | style="background: #DCDCDC"| Processing different sizes of substrates by using a carriers: bonding or not bonding | ||
|- | |- | ||
| style="background: LightGray"| [[/OES| Optical Endpoint System]] | | style="background: LightGray"| [[/OES| Optical Endpoint System]] | ||
| style="background: #DCDCDC"| Using the OES technique to find endpoints and to diagnose plasmas | | style="background: #DCDCDC"| Using the OES technique to find endpoints and to diagnose plasmas | ||
|- | |- | ||
| style="background: LightGray"| [[/LEP| LASER Endpoint System]] | |||
| style="background: #DCDCDC"| Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers) | |||
|- | |||
| style="background: LightGray"| [[/Data4dryetch| Etch product volatility]] | |||
| style="background: #DCDCDC"| Links to various tables with data on etch product volatility | |||
|- | |||
|} | |} | ||
Latest revision as of 09:40, 4 September 2025
Feedback to this page: click here
Techniques, hardware and challenges common to all dry etch tools
This page contains information that is common to dry etch instruments.
| Dry etch page | Description |
|---|---|
| Hardware comparison | Comparison of the different hardware setups of our dry etchers |
| Using carrier wafer | Processing different sizes of substrates by using a carriers: bonding or not bonding |
| Optical Endpoint System | Using the OES technique to find endpoints and to diagnose plasmas |
| LASER Endpoint System | Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers) |
| Etch product volatility | Links to various tables with data on etch product volatility |