Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions
No edit summary |
|||
| (18 intermediate revisions by 4 users not shown) | |||
| Line 1: | Line 1: | ||
= | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]''' | ||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
The | |||
The Anneal Oxide furnace (C1) is the used for annealing, and for dry and wet oxidation of 4" and 6" wafers. | |||
Water vapour for wet oxidation is generated by use of a steamer, which gives a very good oxide quality and uniformity. | |||
A new steamer has been installed in August 2024. The new steamer is from Bronkhorst and similar to the one on the E1. The old steamer was from Rasirc. | |||
<!-- ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] )--> | |||
==Calculation for wet oxidation== | ==Calculation for wet oxidation== | ||
<b><span style="color:Red">The information is this section is not up-to-date, because it is based on oxidation results obtained with the old Rasirc steamer. This steamer has been replaced with a Bronkhorst steamer in August 2024, and this has slightly affected the oxidation rate for wet oxide.</span></b> | |||
The following links give an approximate oxide time/thickness based on prediction equations from the following experiments: | The following links give an approximate oxide time/thickness based on prediction equations from the following experiments: | ||
[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1).xlsx|'''Calculation for wet oxidation''']] | [[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1)_version_2.xlsx|'''Calculation for wet oxidation''']] ''updated on June 2017'' | ||
==Test of the wet oxidation by steamer== | |||
<b><span style="color:Red">The information is this section is not up-to-date, because it is based on oxidation results obtained with the old Rasirc steamer. This steamer has been replaced with a Bronkhorst steamer in August 2024, and this has slightly affected the oxidation rate for wet oxide.</span></b> | |||
''by Patama Pholprasit @nanolab in October 2014'' | |||
''' | ''' | ||
''' | ''' | ||
| Line 37: | Line 51: | ||
'''Anneal:''' Same as process temperature for 20 minutes with N<sub>2</sub>: 6 SLM | '''Anneal:''' Same as process temperature for 20 minutes with N<sub>2</sub>: 6 SLM | ||
'''Test Wafers:''' N-Type <100> No RCA Clean | '''Test Wafers:''' 4 inch silicon wafers, N-Type <100> No RCA Clean | ||
====Results (1)==== | ====Results (1)==== | ||
| Line 89: | Line 103: | ||
'''Temperature:''' 1000, 1050, 1100 C | '''Temperature:''' 1000, 1050, 1100 C | ||
'''Time:''' 0, 5, 15, 100, 180, 250, 360, 720 minutes | '''Growth Time:''' 0, 5, 15, 100, 180, 250, 360, 720 minutes | ||
'''Steamer Flow Rate:''' 10 L/min | '''Steamer Flow Rate:''' 10 L/min | ||
| Line 95: | Line 109: | ||
'''Anneal:''' Same as process temperature for 20 minutes with N<sub>2</sub>: 6 SLM | '''Anneal:''' Same as process temperature for 20 minutes with N<sub>2</sub>: 6 SLM | ||
'''Test Wafers:''' N-Type <100> No RCA Clean | '''Test Wafers:''' 4 inch Silicon wafers, N-Type <100> No RCA Clean | ||
====Results (2)==== | ====Results (2)==== | ||
| Line 118: | Line 132: | ||
''' | ''' | ||
From figure 5 shows that the percent of film non-uniformity deceases when the | From figure 5 shows that the percent of film non-uniformity deceases when the growth time and temperature increase. From this experiment, show that the silicon dioxide has a very good uniformity. The percent of film non-uniformity is lower than 1.5 over the boat, and lower than 1.2 over the wafer. | ||
''' | ''' | ||